- Patent Title: Transistor gate arrangement to modify driver signal characteristics
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Application No.: US16882634Application Date: 2020-05-25
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Publication No.: US11145651B2Publication Date: 2021-10-12
- Inventor: Yew Keong Chong , Sriram Thyagarajan , Kumaraswamy Ramanathan , Damayanti Datta
- Applicant: Arm Limited
- Applicant Address: GB Cambridge
- Assignee: Arm Limited
- Current Assignee: Arm Limited
- Current Assignee Address: GB Cambridge
- Agency: Pramudji Law Group PLLC
- Agent Ari Pramudji
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/78 ; H01L21/8238 ; G11C11/40 ; H03K3/012

Abstract:
Briefly, embodiments of claimed subject matter relate to devices and methods for modifying, such as decreasing rise time and/or fall time, of a driver signal output. To achieve such modifications in driver output signals, additional gates may be positioned at PMOS and/or NMOS regions of a semiconductor film. In addition, at least in particular embodiments, etching of portions of one or more semiconductor regions may increase compressive or tensile stress, which may further operate to modify driver output signals.
Public/Granted literature
- US20200286888A1 Transistor Gate Arrangement to Modify Driver Signal Characteristics Public/Granted day:2020-09-10
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