Invention Grant
- Patent Title: Semiconductor device including stack structures having gate pads with different thicknesses
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Application No.: US16706684Application Date: 2019-12-07
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Publication No.: US11145672B2Publication Date: 2021-10-12
- Inventor: Seok Cheon Baek , Boh Chang Kim , Chung Ki Min , Ji Hoon Park , Byung Kwan You
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2018-0035781 20180328
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L23/00 ; H01L29/423 ; H01L27/11565 ; H01L27/11548 ; H01L27/11575 ; H01L27/11556 ; H01L27/1157 ; H01L21/768 ; H01L23/538 ; H01L27/11531
Abstract:
A semiconductor device includes lower gate electrodes placed on a substrate and spaced apart from one another; upper gate electrodes placed over the lower gate electrodes and spaced apart from one another; an R-type pad extending from one end of at least one electrode among the lower gate electrodes or the upper gate electrodes and having a greater thickness than the lower gate electrode or upper gate electrode connected to the R-type pad; and a P-type pad extending from one end of at least one electrode to which the R-type pad is not connected among the lower gate electrodes or the upper gate electrodes and having a different thickness than the R-type pad, wherein the P-type pad includes a first pad connected to an uppermost lower gate electrode among the lower gate electrodes.
Information query
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