The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a metallization layer over the substrate, and a sensing structure over the metallization layer. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier in proximity to a top surface of the outgassing layer, the patterned outgassing barrier exposing a portion of the outgassing layer, and an electrode over the patterned outgassing barrier. The method for manufacturing the semiconductor device is also provided.