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    Semiconductor structure and manufacturing method thereof
    3.
    发明授权
    Semiconductor structure and manufacturing method thereof 有权
    半导体结构及其制造方法

    公开(公告)号：US09567209B1

    公开(公告)日：2017-02-14

    申请号：US14844486

    申请日：2015-09-03

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Fei-Lung Lai ,  Shiang-Chi Lin

    IPC: H01L27/04 ,  B81B7/00 ,  B81C1/00 ,  G01L9/00

    CPC classification number: B81B7/007 ,  B81B2201/0214 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/0015 ,  B81C1/00158 ,  B81C1/00182 ,  B81C1/00301 ,  B81C2203/035 ,  B81C2203/0792 ,  G01L9/0041 ,  G01L9/0042 ,  G01L9/0044 ,  G01L9/0045 ,  G01L9/0048 ,  G01N27/123

    Abstract: A semiconductor structure includes a first device and a second device. The first device includes a first substrate, a plurality of vias passing through the first substrate and filled with a conductive or semiconductive material and a first oxide layer surrounding the conductive or semiconductive material, a cavity surrounded by the first substrate, a metallic material disposed over the first surface, a second oxide layer disposed over the second surface, a membrane disposed over the second oxide layer and the cavity, a heater disposed within the membrane, a sensing electrode disposed over the membrane and the heater, and a sensing material disposed over the cavity and contacting with the sensing electrode. The second device includes a second substrate, and a bonding structure disposed over the second substrate. The metallic material is bonded with the bonding structure to integrate the first device with the second device.

    Abstract translation: 半导体结构包括第一器件和第二器件。 所述第一器件包括第一衬底，穿过所述第一衬底并填充有导电或半导体材料的多个通孔和围绕所述导电或半导体材料的第一氧化物层，由所述第一衬底包围的空腔，设置在所述第一衬底上的金属材料 第一表面，设置在第二表面上的第二氧化物层，设置在第二氧化物层和空腔上的膜，设置在膜内的加热器，设置在膜和加热器上方的感测电极，以及设置在膜上的感测材料 空腔并与感测电极接触。 第二装置包括第二基板和设置在第二基板上的接合结构。 金属材料与接合结构结合以将第一器件与第二器件集成。

    CMOS-MEMS structure and method of forming the same
    4.
    发明授权
    CMOS-MEMS structure and method of forming the same 有权

    公开(公告)号：US11148936B2

    公开(公告)日：2021-10-19

    申请号：US16716327

    申请日：2019-12-16

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Jung-Huei Peng ,  Chia-Hua Chu ,  Fei-Lung Lai ,  Shiang-Chi Lin

    IPC: B81C1/00 ,  B81B7/00

    Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a metallization layer over the substrate, and a sensing structure over the metallization layer. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier in proximity to a top surface of the outgassing layer, the patterned outgassing barrier exposing a portion of the outgassing layer, and an electrode over the patterned outgassing barrier. The method for manufacturing the semiconductor device is also provided.

    SEMICONDUCTOR MANUFACTURING METHOD AND STRUCTURE THEREOF
    5.
    发明申请
    SEMICONDUCTOR MANUFACTURING METHOD AND STRUCTURE THEREOF 审中-公开

    公开(公告)号：US20200231431A1

    公开(公告)日：2020-07-23

    申请号：US16843740

    申请日：2020-04-08

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Fei-Lung Lai ,  Shiang-Chi Lin

    IPC: B81B7/00 ,  G01L9/00 ,  B81C1/00 ,  G01N27/12

    Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of vias, a signal transmitting portion, a heater and a sensing material. The plurality of vias penetrates the substrate, wherein each of the plurality of vias includes a conductive or semiconductive portion surrounded by an oxide layer. The signal transmitting portion is disposed in the substrate, wherein adjacent vias of the plurality of vias surrounds the signal transmitting portion. The heater is electrically connected to the signal transmitting portion, and the sensing material is disposed over the heater and electrically connected to the substrate. A method of manufacturing a semiconductor structure is also provided.

    MEMS structure and manufacturing method thereof
    6.
    发明授权
    MEMS structure and manufacturing method thereof 有权

    公开(公告)号：US11505454B2

    公开(公告)日：2022-11-22

    申请号：US16583111

    申请日：2019-09-25

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Kang-Che Huang ,  Yi-Chien Wu ,  Shiang-Chi Lin ,  Jung-Huei Peng ,  Chun-Wen Cheng

    IPC: B81C1/00

    Abstract: A method for manufacturing a MEMS structure is provided. The method includes providing a MEMS substrate having a first surface, forming a first buffer layer on the first surface of the MEMS substrate, and forming a first roughening layer on the first buffer layer. Also, a MEMS structure is provided. The MEMS structure includes a MEMS substrate, a first buffer layer, a first roughening layer, and a CMOS substrate. The MEMS substrate has a first surface and a pillar is on the first surface. The first buffer layer is on the first surface. The first roughening layer is on the first buffer layer. The CMOS substrate has a second surface and is bonded to the MEMS substrate via the pillar. Moreover, an air gap is between the first roughening layer and the second surface of the CMOS substrate.

    Semiconductor manufacturing method and structure thereof
    7.
    发明授权
    Semiconductor manufacturing method and structure thereof 有权

    公开(公告)号：US11254564B2

    公开(公告)日：2022-02-22

    申请号：US16843740

    申请日：2020-04-08

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Fei-Lung Lai ,  Shiang-Chi Lin

    IPC: H01L21/76 ,  H01L49/02 ,  B81B7/00 ,  G01L9/00 ,  B81C1/00 ,  G01N27/12

    Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of vias, a signal transmitting portion, a heater and a sensing material. The plurality of vias penetrates the substrate, wherein each of the plurality of vias includes a conductive or semiconductive portion surrounded by an oxide layer. The signal transmitting portion is disposed in the substrate, wherein adjacent vias of the plurality of vias surrounds the signal transmitting portion. The heater is electrically connected to the signal transmitting portion, and the sensing material is disposed over the heater and electrically connected to the substrate. A method of manufacturing a semiconductor structure is also provided.

    CMOS-MEMS structure and method of forming the same
    8.
    发明授权
    CMOS-MEMS structure and method of forming the same 有权

    公开(公告)号：US10046965B2

    公开(公告)日：2018-08-14

    申请号：US15457498

    申请日：2017-03-13

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Jung-Huei Peng ,  Chia-Hua Chu ,  Fei-Lung Lai ,  Shiang-Chi Lin

    IPC: B81C1/00

    Abstract: The present disclosure provides a CMOS structure, including a substrate, a metallization layer over the substrate, a sensing structure over the metallization layer, and a signal transmitting structure adjacent to the sensing structure. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier over the outgassing layer; and an electrode over the patterned outgassing barrier. The signal transmitting structure electrically couples the electrode and the metallization layer.

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