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公开(公告)号:US10508027B2
公开(公告)日:2019-12-17
申请号:US16058897
申请日:2018-08-08
Inventor: Jung-Huei Peng , Chia-Hua Chu , Fei-Lung Lai , Shiang-Chi Lin
Abstract: The present disclosure provides a CMOS structure, including a substrate, a metallization layer over the substrate, a sensing structure over the metallization layer, and a signal transmitting structure adjacent to the sensing structure. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier over the outgassing layer; and an electrode over the patterned outgassing barrier. The signal transmitting structure electrically couples the electrode and the metallization layer.
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公开(公告)号:US09630831B1
公开(公告)日:2017-04-25
申请号:US14883908
申请日:2015-10-15
Inventor: Jung-Huei Peng , Chia-Hua Chu , Fei-Lung Lai , Shiang-Chi Lin
CPC classification number: B81C1/00238 , B81B7/0038 , B81B2201/0235 , B81B2201/0242 , B81B2203/0127 , B81B2203/0315 , B81B2203/04 , B81B2207/012 , B81C1/00285 , B81C2201/0125 , B81C2201/0154 , B81C2201/019 , B81C2203/0118 , B81C2203/035 , B81C2203/0792
Abstract: The present disclosure provides a CMOS structure, including a substrate, a metallization layer over the substrate, a sensing structure over the metallization layer, and a signal transmitting structure adjacent to the sensing structure. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier over the outgassing layer; and an electrode over the patterned outgassing barrier. The signal transmitting structure electrically couples the electrode and the metallization layer.
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公开(公告)号:US09567209B1
公开(公告)日:2017-02-14
申请号:US14844486
申请日:2015-09-03
Inventor: Chun-Wen Cheng , Chia-Hua Chu , Fei-Lung Lai , Shiang-Chi Lin
CPC classification number: B81B7/007 , B81B2201/0214 , B81B2203/0127 , B81B2203/0315 , B81B2203/04 , B81B2207/012 , B81B2207/07 , B81C1/0015 , B81C1/00158 , B81C1/00182 , B81C1/00301 , B81C2203/035 , B81C2203/0792 , G01L9/0041 , G01L9/0042 , G01L9/0044 , G01L9/0045 , G01L9/0048 , G01N27/123
Abstract: A semiconductor structure includes a first device and a second device. The first device includes a first substrate, a plurality of vias passing through the first substrate and filled with a conductive or semiconductive material and a first oxide layer surrounding the conductive or semiconductive material, a cavity surrounded by the first substrate, a metallic material disposed over the first surface, a second oxide layer disposed over the second surface, a membrane disposed over the second oxide layer and the cavity, a heater disposed within the membrane, a sensing electrode disposed over the membrane and the heater, and a sensing material disposed over the cavity and contacting with the sensing electrode. The second device includes a second substrate, and a bonding structure disposed over the second substrate. The metallic material is bonded with the bonding structure to integrate the first device with the second device.
Abstract translation: 半导体结构包括第一器件和第二器件。 所述第一器件包括第一衬底,穿过所述第一衬底并填充有导电或半导体材料的多个通孔和围绕所述导电或半导体材料的第一氧化物层,由所述第一衬底包围的空腔,设置在所述第一衬底上的金属材料 第一表面,设置在第二表面上的第二氧化物层,设置在第二氧化物层和空腔上的膜,设置在膜内的加热器,设置在膜和加热器上方的感测电极,以及设置在膜上的感测材料 空腔并与感测电极接触。 第二装置包括第二基板和设置在第二基板上的接合结构。 金属材料与接合结构结合以将第一器件与第二器件集成。
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公开(公告)号:US11148936B2
公开(公告)日:2021-10-19
申请号:US16716327
申请日:2019-12-16
Inventor: Jung-Huei Peng , Chia-Hua Chu , Fei-Lung Lai , Shiang-Chi Lin
Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a metallization layer over the substrate, and a sensing structure over the metallization layer. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier in proximity to a top surface of the outgassing layer, the patterned outgassing barrier exposing a portion of the outgassing layer, and an electrode over the patterned outgassing barrier. The method for manufacturing the semiconductor device is also provided.
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公开(公告)号:US20200231431A1
公开(公告)日:2020-07-23
申请号:US16843740
申请日:2020-04-08
Inventor: Chun-Wen Cheng , Chia-Hua Chu , Fei-Lung Lai , Shiang-Chi Lin
Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of vias, a signal transmitting portion, a heater and a sensing material. The plurality of vias penetrates the substrate, wherein each of the plurality of vias includes a conductive or semiconductive portion surrounded by an oxide layer. The signal transmitting portion is disposed in the substrate, wherein adjacent vias of the plurality of vias surrounds the signal transmitting portion. The heater is electrically connected to the signal transmitting portion, and the sensing material is disposed over the heater and electrically connected to the substrate. A method of manufacturing a semiconductor structure is also provided.
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公开(公告)号:US11505454B2
公开(公告)日:2022-11-22
申请号:US16583111
申请日:2019-09-25
Inventor: Kang-Che Huang , Yi-Chien Wu , Shiang-Chi Lin , Jung-Huei Peng , Chun-Wen Cheng
IPC: B81C1/00
Abstract: A method for manufacturing a MEMS structure is provided. The method includes providing a MEMS substrate having a first surface, forming a first buffer layer on the first surface of the MEMS substrate, and forming a first roughening layer on the first buffer layer. Also, a MEMS structure is provided. The MEMS structure includes a MEMS substrate, a first buffer layer, a first roughening layer, and a CMOS substrate. The MEMS substrate has a first surface and a pillar is on the first surface. The first buffer layer is on the first surface. The first roughening layer is on the first buffer layer. The CMOS substrate has a second surface and is bonded to the MEMS substrate via the pillar. Moreover, an air gap is between the first roughening layer and the second surface of the CMOS substrate.
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公开(公告)号:US11254564B2
公开(公告)日:2022-02-22
申请号:US16843740
申请日:2020-04-08
Inventor: Chun-Wen Cheng , Chia-Hua Chu , Fei-Lung Lai , Shiang-Chi Lin
Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of vias, a signal transmitting portion, a heater and a sensing material. The plurality of vias penetrates the substrate, wherein each of the plurality of vias includes a conductive or semiconductive portion surrounded by an oxide layer. The signal transmitting portion is disposed in the substrate, wherein adjacent vias of the plurality of vias surrounds the signal transmitting portion. The heater is electrically connected to the signal transmitting portion, and the sensing material is disposed over the heater and electrically connected to the substrate. A method of manufacturing a semiconductor structure is also provided.
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公开(公告)号:US10046965B2
公开(公告)日:2018-08-14
申请号:US15457498
申请日:2017-03-13
Inventor: Jung-Huei Peng , Chia-Hua Chu , Fei-Lung Lai , Shiang-Chi Lin
IPC: B81C1/00
Abstract: The present disclosure provides a CMOS structure, including a substrate, a metallization layer over the substrate, a sensing structure over the metallization layer, and a signal transmitting structure adjacent to the sensing structure. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier over the outgassing layer; and an electrode over the patterned outgassing barrier. The signal transmitting structure electrically couples the electrode and the metallization layer.
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公开(公告)号:US10035700B2
公开(公告)日:2018-07-31
申请号:US15416411
申请日:2017-01-26
Inventor: Chun-Wen Cheng , Chia-Hua Chu , Fei-Lung Lai , Shiang-Chi Lin
CPC classification number: B81B7/007 , B81B2201/0214 , B81B2203/0127 , B81B2203/0315 , B81B2203/04 , B81B2207/012 , B81B2207/07 , B81C1/0015 , B81C1/00158 , B81C1/00182 , B81C1/00301 , B81C2203/035 , B81C2203/0792 , G01L9/0041 , G01L9/0042 , G01L9/0044 , G01L9/0045 , G01L9/0048 , G01N27/123
Abstract: A semiconductor structure includes a substrate including a plurality of vias passing through the substrate and filled with a conductive or semiconductive material, and an oxide layer surrounding the conductive or semiconductive material, the substrate defining a cavity therein; a membrane disposed over the substrate and the cavity; a heater disposed within the membrane and electrically connected with the substrate; and a sensing electrode disposed over the membrane and the heater.
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