Invention Grant
- Patent Title: Multi-bit read-only memory device
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Application No.: US16449285Application Date: 2019-06-21
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Publication No.: US11152060B2Publication Date: 2021-10-19
- Inventor: Xiaofei Wang , Dinesh Somasekhar , Clifford Ong , Eric A Karl , Zheng Guo , Gordon Carskadon
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C11/56
- IPC: G11C11/56 ; G11C17/12 ; H01L27/112

Abstract:
Some embodiments include apparatuses having non-volatile memory cells, each of the non-volatile memory cells to store more than one bit of information; data lines, at most one of the data lines electrically coupled to each of the non-volatile memory cells; a circuit including transistors coupled to the data lines, the transistors including gates coupled to each other; and an encoder including input nodes and output nodes, the input nodes to receive input information from the data lines through the transistors, and the output nodes to provide output information having a value based on a value of the input information.
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