A semiconductor structure includes a plurality of field effect transistors formed on a substrate including p-type doped field effect transistors (pFETs) and n-type doped field effect transistors (nFETs). A self-aligned buried local interconnect electrically connects a bottom source or drain region of the pFET with an adjacent bottom source or drain region of the nFET. The self-aligned buried local interconnect is serially aligned with and intermediate opposing ends of a gate electrode. Other embodiments include methods for forming the buried local interconnect.