In accordance with an embodiment, a method for protecting a circuit includes: receiving a stress caused by an electrostatic discharge (ESD) event from a first node; limiting a current using a current limiting element coupled between the first node and a second node connected to the circuit; and limiting a voltage on the second node caused by the ESD event using a protection circuit including at least one MOS transistor having a load path coupled to the second node, where the at least one MOS transistor is disposed in a well, and a bias circuit coupled to a gate and a bulk connection of the at least one MOS transistor and a supply node.