Invention Grant
- Patent Title: Integrated circuits and methods of forming integrated circuits
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Application No.: US16816365Application Date: 2020-03-12
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Publication No.: US11164858B2Publication Date: 2021-11-02
- Inventor: Benfu Lin , Bo Yu , Chim Seng Seet , Kin Wai Tang
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Viering Jentschura & Partner mbB
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/01 ; H01L21/70 ; H01L49/02

Abstract:
According to various embodiments, an integrated circuit may include an upper inter-level dielectric (ILD) layer, a lower ILD layer, and an interlayer arranged between the upper ILD layer and the lower ILD layer. The integrated circuit may further include a capacitor device and a resistor device. The capacitor device may include a top plate disposed in a first region of the interlayer and a bottom plate disposed in the lower ILD layer. The resistor device may include a resistive element and a plurality of vias disposed in a second region of the interlayer. The plurality of vias may extend from the resistive element to the lower ILD layer. A distance between the top plate and the lower ILD layer may be at least substantially equal to a height of each via of the plurality of vias.
Public/Granted literature
- US20210288042A1 INTEGRATED CIRCUITS AND METHODS OF FORMING INTEGRATED CIRCUITS Public/Granted day:2021-09-16
Information query
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