Invention Grant
- Patent Title: Optical proximity correction (OPC) methods and methods of manufacturing masks using the OPC methods
-
Application No.: US16849258Application Date: 2020-04-15
-
Publication No.: US11169437B2Publication Date: 2021-11-09
- Inventor: Sangchul Yeo , Narak Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2019-0110788 20190906
- Main IPC: G03F1/36
- IPC: G03F1/36

Abstract:
An optical proximity correction method includes extracting edges of a layout of a pattern on a mask, including at least one edge of the layout that is a curvilinear edge, and generating an optical image of the pattern by applying an edge filter, which includes an any-angle filter corresponding to an angle of the curvilinear edge, to the extracted edges of the layout. The any-angle filter may be generated using source sector rotation to correspond to the angle of the curvilinear edge.
Public/Granted literature
- US20210072637A1 OPTICAL PROXIMITY CORRECTION (OPC) METHODS AND METHODS OF MANUFACTURING MASKS USING THE OPC METHODS Public/Granted day:2021-03-11
Information query