公开(公告)号：US20230418260A1

公开(公告)日：2023-12-28

申请号：US18106091

申请日：2023-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangchul Yeo ,  Jaewon Yang ,  Hyeok Lee

IPC: G05B19/4099 ,  G05B13/02

CPC classification number: G05B19/4099 ,  G05B2219/45028 ,  G05B13/0265

Abstract: A reliable lithography model generating method reflecting a mask bias variation and a mask manufacturing method including the lithography model generating method are provided. The lithography model generating method includes preparing basic image data for learning, preparing transform image data that indicates a mask bias variation, generating a lithography model by performing deep learning by combining the basic image data and the transform image data, and verifying the lithography model.

公开(公告)号：US20230177815A1

公开(公告)日：2023-06-08

申请号：US17820911

申请日：2022-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangchul Yeo ,  Jaewon Yang ,  Hyeok Lee ,  Sooryong Lee

IPC: G06V10/776 ,  G06T3/60 ,  G06V10/774

CPC classification number: G06V10/776 ,  G06T3/60 ,  G06V10/774

Abstract: A method of training a semiconductor process image generator includes training the semiconductor process image generator with a plurality of mask images including a first group and a second group, training the semiconductor process image generator with the second group and a first transformed group obtained by applying a transformation to the first group, and training the semiconductor process image generator with the first group and a second transformed group obtained by applying a transformation to the second group.

公开(公告)号：US12299869B2

公开(公告)日：2025-05-13

申请号：US17849617

申请日：2022-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeok Lee ,  Jaewon Yang ,  Sangchul Yeo ,  Eunju Kim ,  Sooryong Lee

IPC: G06T19/00 ,  A61B6/00 ,  A61B6/02 ,  G06F3/04815 ,  G06F3/04842 ,  G06F30/27 ,  G06T7/00 ,  G06V10/10 ,  G06V10/46

Abstract: An operating method of a computing device for predicting a profile using deep learning includes sampling a unique pattern in a full chip, extracting a contour of a resist profile of each of a plurality of heights by performing rigorous simulation corresponding to the unique pattern, preparing an input image and an output image corresponding to the contour of each of the plurality of heights, performing deep learning on the extracted contour using the input image and the output image, and generating a profile prediction model according to performing of the deep leaning.

公开(公告)号：US20230132893A1

公开(公告)日：2023-05-04

申请号：US17841734

申请日：2022-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mijin Kwon ,  Sangchul Yeo

IPC: G03F1/36 ,  G06T7/00 ,  G03F1/70 ,  G06F16/51

Abstract: A reliable mask layout correction method capable of manufacturing a mask including a curvilinear pattern, and a mask manufacturing method including the correction method. The mask layout correction method based on machine learning may include: acquiring optical proximity correction (OPC)-ed layout images for masks including a curvilinear pattern, extracting mask contour images from scanning electron microscope (SEM) images for masks manufactured based on the OPC-ed layout images, performing machine learning using the OPC-ed layout images and the mask contour images to generate a conversion model, and correcting the OPC-ed layout images using the conversion model.

公开(公告)号：US20240160827A1

公开(公告)日：2024-05-16

申请号：US18341124

申请日：2023-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangchul Yeo

IPC: G06F30/398 ,  G03F1/36 ,  H01L21/027

CPC classification number: G06F30/398 ,  G03F1/36 ,  H01L21/0273 ,  G06F2119/18

Abstract: In a method of training a deep learning model for optical proximity correction, sample input images associated with sample layouts may be obtained, where the sample layouts are targets of the optical proximity correction. Sample reference images that correspond to the sample input images may be extracted from sample masks that are fabricated by performing the optical proximity correction on the sample layouts. A training operation may be performed on the deep learning model used in the optical proximity correction based on the sample input images and the sample reference images. The sample layouts may include sample layout patterns to form process patterns of a semiconductor device. The sample input images may include images of corner portions of the sample layout patterns. The deep learning model may be used to perform a corner rounding operation on the corner portions of the sample layout patterns.

公开(公告)号：US20230196545A1

公开(公告)日：2023-06-22

申请号：US17849617

申请日：2022-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeok Lee ,  Jaewon Yang ,  Sangchul Yeo ,  Eunju Kim ,  Sooryong Lee

IPC: G06T7/00 ,  G06V10/46 ,  G06V10/10 ,  G06F30/27

CPC classification number: G06T7/0006 ,  G06V10/46 ,  G06V10/10 ,  G06F30/27 ,  G06T2207/20081 ,  G06T2207/30148

Abstract: An operating method of a computing device for predicting a profile using deep learning includes sampling a unique pattern in a full chip, extracting a contour of a resist profile of each of a plurality of heights by performing rigorous simulation corresponding to the unique pattern, preparing an input image and an output image corresponding to the contour of each of the plurality of heights, performing deep learning on the extracted contour using the input image and the output image, and generating a profile prediction model according to performing of the deep leaning.

公开(公告)号：US11169437B2

公开(公告)日：2021-11-09

申请号：US16849258

申请日：2020-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangchul Yeo ,  Narak Choi

IPC: G03F1/36

Abstract: An optical proximity correction method includes extracting edges of a layout of a pattern on a mask, including at least one edge of the layout that is a curvilinear edge, and generating an optical image of the pattern by applying an edge filter, which includes an any-angle filter corresponding to an angle of the curvilinear edge, to the extracted edges of the layout. The any-angle filter may be generated using source sector rotation to correspond to the angle of the curvilinear edge.

公开(公告)号：US20210072637A1

公开(公告)日：2021-03-11

申请号：US16849258

申请日：2020-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangchul Yeo ,  Narak Choi

IPC: G03F1/36

Abstract: An optical proximity correction method includes extracting edges of a layout of a pattern on a mask, including at least one edge of the layout that is a curvilinear edge, and generating an optical image of the pattern by applying an edge filter, which includes an any-angle filter corresponding to an angle of the curvilinear edge, to the extracted edges of the layout. The any-angle filter may be generated using source sector rotation to correspond to the angle of the curvilinear edge.