Invention Grant
- Patent Title: Multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAM)
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Application No.: US16921879Application Date: 2020-07-06
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Publication No.: US11170863B2Publication Date: 2021-11-09
- Inventor: Guobiao Zhang , Yida Li , Xiaodong Xiang , Hongyu Yu , Yuejin Guo , Shengming Zhou , Guoxing Zhang , Guangzhao Liu , Mingtao Hu , Wang Zhang , Mei Shen
- Applicant: Southern University of Science and Technology
- Applicant Address: CN ShenZhen
- Assignee: Southern University of Science and Technology
- Current Assignee: Southern University of Science and Technology
- Current Assignee Address: CN ShenZhen
- Priority: CN201610238012.7 20160414,CN201810872935.7 20180802,CN202010052642.1 20200117
- Main IPC: G11C17/16
- IPC: G11C17/16 ; G11C29/00 ; G11C7/14 ; G11C11/56 ; G11C13/00 ; G11C17/18
Abstract:
The present invention discloses a multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAMMB). It comprises a plurality of RRAM cells stacked above a semiconductor substrate. Each RRAM cell comprises a RRAM layer, which is switched from a high-resistance state to a low-resistance state during programming. By adjusting the programming current, the programmed RRAMs have different resistances.
Public/Granted literature
- US20200350030A1 Multi-Bit-Per-Cell Three-Dimensional Resistive Random-Access Memory (3D-RRAM) Public/Granted day:2020-11-05
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