Invention Grant
- Patent Title: Method for manufacturing a contact pad, method for manufacturing a semiconductor device using same, and semiconductor device
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Application No.: US16491678Application Date: 2018-02-27
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Publication No.: US11171050B2Publication Date: 2021-11-09
- Inventor: Koichi Yatsuda , Takashi Hayakawa , Mitsuaki Iwashita , Takashi Tanaka
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JPJP2017-044808 20170309
- International Application: PCT/JP2018/007230 WO 20180227
- International Announcement: WO2018/163913 WO 20180913
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L23/528 ; H01L27/11556 ; H01L27/11582
Abstract:
A method includes a step of performing a selective catalyst treatment by supplying a catalyst solution to an upper surface of an exposed interconnection layer forming a step portion of a stepped shape formed by pair layers stacked to form the stepped shape, the pair layer including an interconnection layer formed on an insulating layer, and a step of selectively growing a metal layer by performing electroless plating on the upper surface of the interconnection layer on which the catalyst treatment is performed.
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