公开(公告)号：US10731256B2

公开(公告)日：2020-08-04

申请号：US15479429

申请日：2017-04-05

Applicant: Tokyo Electron Limited

Inventor： Kazutoshi Iwai ,  Nobutaka Mizutani ,  Yuichiro Inatomi ,  Takashi Tanaka

IPC: C23C18/34 ,  C23C18/16

Abstract: A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.

公开(公告)号：US09837308B2

公开(公告)日：2017-12-05

申请号：US14384861

申请日：2013-02-22

Applicant: Tokyo Electron Limited

Inventor： Nobutaka Mizutani ,  Takashi Tanaka ,  Yuichiro Inatomi ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC: H01L21/768 ,  H01L21/288 ,  C23C18/18 ,  C23C18/16 ,  C23C18/38 ,  C23C14/02 ,  C23C16/02 ,  C23C28/00 ,  C23C14/24 ,  C23C14/04 ,  C23C16/04

CPC classification number: H01L21/76867 ,  C23C14/024 ,  C23C14/046 ,  C23C14/24 ,  C23C16/0272 ,  C23C16/045 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/165 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1692 ,  C23C18/1694 ,  C23C18/1844 ,  C23C18/1893 ,  C23C18/38 ,  C23C28/322 ,  C23C28/34 ,  H01L21/288 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76898

Abstract: A plating method can improve adhesivity with a substrate. The plating method of performing a plating process on the substrate includes forming a vacuum-deposited layer 2A on the substrate 2 by performing a vacuum deposition process on the substrate 2; forming an adhesion layer 21 and a catalyst adsorption layer 22 on the vacuum-deposited layer 2A of the substrate 2; and forming a plating layer stacked body 23 having a first plating layer 23a and a second plating layer 23b which function as a barrier film on the catalyst adsorption layer 22 of the substrate 2. By forming the vacuum-deposited layer 2A, a surface of the substrate 2 can be smoothened, so that the vacuum-deposited layer 2A serving as an underlying layer can improve the adhesivity.

公开(公告)号：US20170292192A1

公开(公告)日：2017-10-12

申请号：US15479429

申请日：2017-04-05

Applicant: Tokyo Electron Limited

Inventor： Kazutoshi Iwai ,  Nobutaka Mizutani ,  Yuichiro Inatomi ,  Takashi Tanaka

IPC: C23C18/34 ,  C23C18/16

Abstract: A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.

公开(公告)号：US09761485B2

公开(公告)日：2017-09-12

申请号：US14796227

申请日：2015-07-10

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/768 ,  H01L21/288 ,  C23C18/16 ,  C23C18/18 ,  C23C18/40 ,  C23C18/50 ,  C25D7/00

CPC classification number: H01L21/76874 ,  C23C18/1633 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1696 ,  C23C18/1893 ,  C23C18/40 ,  C23C18/50 ,  C25D7/00 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76898

Abstract: A catalyst layer can be uniformly formed on an entire surface of a substrate and an entire inner surface of a recess. A catalyst layer forming method of forming the catalyst layer on the substrate includes a first supply processing of forming a substrate surface catalyst layer 22A by supplying a catalyst liquid on the entire surface of the substrate 2; and a second supply processing of forming a recess inner surface catalyst layer 22B by supplying the catalyst liquid to a central portion of the substrate 2 while rotating the substrate 2.

公开(公告)号：US09523153B2

公开(公告)日：2016-12-20

申请号：US14548893

申请日：2014-11-20

Applicant: Tokyo Electron Limited

Inventor： Takashi Tanaka ,  Yuichiro Inatomi ,  Kazutoshi Iwai ,  Mitsuaki Iwashita

IPC: C23C28/00 ,  C23C28/02 ,  C23C18/04 ,  C23C18/06 ,  C23C18/16 ,  C23C18/32 ,  H01L21/768 ,  H01L21/288 ,  C23C18/18 ,  C23C18/02 ,  C23C18/12 ,  C23C18/38

CPC classification number: C23C28/34 ,  C23C18/02 ,  C23C18/04 ,  C23C18/06 ,  C23C18/1275 ,  C23C18/165 ,  C23C18/1651 ,  C23C18/1851 ,  C23C18/1865 ,  C23C18/1868 ,  C23C18/1893 ,  C23C18/32 ,  C23C18/38 ,  C23C28/00 ,  C23C28/021 ,  C23C28/321 ,  H01L21/288 ,  H01L21/76874 ,  H01L21/76898

Abstract: A pre-treatment method for plating can form a plating layer having sufficient adhesivity on an inner surface of a recess and on a surface of a substrate at an outside of the recess even when the recess has a high aspect ratio. The pre-treatment method for plating includes a preparation process of preparing the substrate having the recess; a first coupling layer forming process of forming a first coupling layer 21a at least on the inner surface of the recess of the substrate by using a first coupling agent; and a second coupling layer forming process of forming a second coupling layer 21b at least on the surface of the substrate at the outside of the recess by using a second coupling agent after the first coupling layer forming process.

Abstract translation: 电镀的预处理方法即使在凹部具有高纵横比的情况下，也可以在凹部的内表面和凹部的外侧的基板的表面上形成具有充分粘合性的镀层。 电镀预处理方法包括制备具有凹部的基板的制备方法; 通过使用第一偶联剂，至少在基板的凹部的内表面上形成第一耦合层21a的第一耦合层形成工艺; 以及第二耦合层形成工艺，其在第一耦合层形成工艺之后通过使用第二偶联剂在至少在凹部的外部的基板的表面上形成第二耦合层21b。

公开(公告)号：US20160307759A1

公开(公告)日：2016-10-20

申请号：US15098624

申请日：2016-04-14

Applicant: Tokyo Electron Limited

Inventor： Nobutaka Mizutani ,  Mitsuaki Iwashita ,  Takashi Tanaka

IPC: H01L21/288 ,  H01L21/311 ,  C23C18/31 ,  C23C18/18 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/288 ,  C23C18/1608 ,  C23C18/1886 ,  C23C18/1889 ,  C23C18/31 ,  C23C18/32 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/31133 ,  H01L21/76865 ,  H01L21/76874 ,  H01L21/76879 ,  H01L23/53209

Abstract: A plating method includes forming a catalyst layer 118 on a surface of a substrate including an inner surface of a recess 112; drying the substrate having the catalyst layer formed thereon such that an inside of the recess is dried as well; removing the catalyst layer at least on the surface of the substrate at the outside of the recess by supplying a processing liquid, which is configured to dissolve a material of the surface of the substrate, onto the surface of the substrate while rotating the dried substrate and while preventing or suppressing the processing liquid from being introduced into the dried inside of the recess; and forming a plating layer 119 on the inside of the recess, at which the catalyst layer is not removed, by an electroless plating process.

Abstract translation: 电镀方法包括在包括凹部112的内表面的基板的表面上形成催化剂层118; 干燥具有形成在其上的催化剂层的基板，使得凹部的内部也被干燥; 在所述凹部的外侧，至少在所述基板的表面上除去所述催化剂层，所述处理液被构造成将所述基板的表面的材料溶解在所述基板的表面上，同时旋转所述干燥的基板， 同时防止或抑制处理液体被引入到凹部的干燥内部; 并且通过化学镀处理在不去除催化剂层的凹部的内部形成镀层119。

公开(公告)号：US11795546B2

公开(公告)日：2023-10-24

申请号：US16767278

申请日：2018-11-22

Applicant: Tokyo Electron Limited

Inventor： Takashi Tanaka ,  Keiichi Fujita ,  Yuichiro Inatomi

IPC: C23C18/18 ,  C23C18/16 ,  C23G1/02 ,  C23G3/00 ,  H01L21/02

CPC classification number: C23C18/1803 ,  C23C18/1632 ,  C23G1/02 ,  C23G3/00 ,  H01L21/02057

Abstract: A substrate processing apparatus includes a substrate holder configured to horizontally hold and rotate a substrate which has a recess and a base metal layer exposed from a bottom surface of the recess; and a pre-cleaning liquid supply configured to supply a pre-cleaning liquid such as dicarboxylic acid or tricarboxylic acid onto the substrate being held and rotated by the substrate holder, to thereby pre-clean the base metal layer. A temperature of the pre-cleaning liquid on the substrate is equal to or higher than 40° C.

公开(公告)号：US20210358767A1

公开(公告)日：2021-11-18

申请号：US16938047

申请日：2019-01-23

Applicant: Tokyo Electron Limited

Inventor： Takashi Tanaka ,  Mitsuaki Iwashita

IPC: H01L21/48 ,  H01L21/768 ,  C23C18/16

Abstract: A multilayer wiring forming method includes forming, in a via 70 formed at a preset position in an insulating film 60 provided on a wiring 50 of a substrate, the via 70 being extended to the wiring 70, a monomolecular film 80 on a bottom surface 73 at which the wiring 50 is exposed; forming a barrier film 81 on a side surface 72 of the via 70; removing the monomolecular film 80; and forming an electroless plating film 82 from the bottom surface 73 of the via 70 by using the wiring 50 exposed at the bottom surface 73 of the via 70 as the catalyst.

公开(公告)号：US20210002770A1

公开(公告)日：2021-01-07

申请号：US16767278

申请日：2018-11-22

Applicant: Tokyo Electron Limited

Inventor： Takashi Tanaka ,  Keiichi Fujita ,  Yuichiro Inatomi

IPC: C23C18/18 ,  C23G1/02 ,  C23G3/00 ,  C23C18/16 ,  H01L21/02

Abstract: A substrate processing apparatus includes a substrate holder configured to horizontally hold and rotate a substrate which has a recess and a base metal layer exposed from a bottom surface of the recess; and a pre-cleaning liquid supply configured to supply a pre-cleaning liquid such as dicarboxylic acid or tricarboxylic acid onto the substrate being held and rotated by the substrate holder, to thereby pre-clean the base metal layer. A temperature of the pre-cleaning liquid on the substrate is equal to or higher than 40° C.

公开(公告)号：US20200325581A1

公开(公告)日：2020-10-15

申请号：US16914652

申请日：2020-06-29

Applicant: Tokyo Electron Limited

Inventor： Kazutoshi Iwai ,  Nobutaka Mizutani ,  Yuichiro Inatomi ,  Takashi Tanaka

IPC: C23C18/34 ,  C23C18/16

Abstract: A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.