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    Method of manufacturing semiconductor device
    1.
    发明授权
    Method of manufacturing semiconductor device 有权

    公开(公告)号：US10325780B2

    公开(公告)日：2019-06-18

    申请号：US15831831

    申请日：2017-12-05

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Koichi Yatsuda ,  Takashi Hayakawa ,  Tatsuya Yamaguchi

    IPC: H01L21/311 ,  H01L21/02 ,  H01L21/768 ,  H01L23/532

    Abstract: There is provided a method of manufacturing a semiconductor device, which includes: supplying a raw material for polymerization to a porous low dielectric constant film formed on a substrate for manufacturing a semiconductor device, and filling holes formed in the porous low dielectric constant film with a polymer having a urea bond; subsequently, forming a pattern mask for etching on a surface of the porous low dielectric constant film; subsequently, etching the porous low dielectric constant film; subsequently, removing the pattern mask; and heating the substrate to depolymerize the polymer.

    Method for manufacturing semiconductor device
    2.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08951908B2

    公开(公告)日：2015-02-10

    申请号：US14221711

    申请日：2014-03-21

    Applicant: Tokyo Electron Limited

    Inventor： Kenichi Hara ,  Takashi Hayakawa ,  Mariko Ozawa

    IPC: H01L21/768 ,  H01L23/532 ,  H01L21/321 ,  H01L21/3213

    CPC classification number: H01L21/76843 ,  H01L21/3212 ,  H01L21/32136 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method for manufacturing semiconductor device includes preparing a structure including a substrate, an insulating layer on the substrate and having a recess, a barrier film on the insulating layer, and a copper film on the barrier such that the copper film is filling the recess with the barrier between the insulating layer and copper film, removing the copper film down to interface with the barrier such that copper wiring is formed in the recess, etching the wiring such that surface of the wiring is recessed from surface of the insulating layer, and removing the barrier from the surface of the insulating layer such that the surface of the insulating layer is exposed. The etching includes positioning the structure removed down to the barrier in organic compound atmosphere having vacuum state, and irradiating oxygen gas cluster ion beam on the surface of the wiring to anisotropically etch the wiring.

    Abstract translation: 一种半导体器件的制造方法，其特征在于，在基板上制作具有凹部的绝缘层，绝缘层上的阻挡膜和阻挡层上的铜膜的结构，使得铜膜以 绝缘层和铜膜之间的阻挡层，将铜膜向下移动以与屏障接合，使得在凹槽中形成铜布线，蚀刻布线使得布线的表面从绝缘层的表面凹陷，并且去除 从绝缘层的表面阻挡绝缘层的表面露出。 蚀刻包括在具有真空状态的有机化合物气氛中将结构向下移动到阻挡层，并且在布线的表面上照射氧气团簇离子束以各向异性地蚀刻布线。

    Etching method, etching apparatus, and storage medium
    6.
    发明授权
    Etching method, etching apparatus, and storage medium 有权
    蚀刻方法，蚀刻装置和存储介质

    公开(公告)号：US09449844B2

    公开(公告)日：2016-09-20

    申请号：US13624652

    申请日：2012-09-21

    Applicant: TOKYO ELECTRON LIMITED ,  HYOGO PREFECTURE

    Inventor： Kenichi Hara ,  Isao Yamada ,  Noriaki Toyoda ,  Takashi Hayakawa

    IPC: C23C14/00 ,  C23C14/32 ,  H01L21/3213 ,  C23F4/02 ,  H01L21/3065

    CPC classification number: H01L21/32136 ,  C23F4/02 ,  H01L21/3065

    Abstract: An etching method for anisotropically etching a Cu film on a substrate surface includes providing a substrate having a Cu film on a surface thereof in a chamber and supplying an organic compound into the chamber while setting the inside of the chamber to a vacuum state and irradiating an oxygen gas cluster ion beam to the Cu film. The etching method further includes oxidizing Cu or the Cu film to a copper oxide by oxygen gas cluster ions in the oxygen gas cluster ion beam and anisotropically etching the Cu film by reacting the copper oxide and the organic compound.

    Abstract translation: 用于在基板表面上各向异性蚀刻Cu膜的蚀刻方法包括在室内将表面上具有Cu膜的基板提供到室中，并且将室内的内部设置为真空状态并向其中照射 氧气团簇离子束到Cu膜。 蚀刻方法还包括在氧气簇离子束中通过氧气团簇离子将Cu或Cu膜氧化成氧化铜，并通过使氧化铜和有机化合物反应各向异性蚀刻Cu膜。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20140206187A1

    公开(公告)日：2014-07-24

    申请号：US14221711

    申请日：2014-03-21

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Kenichi HARA ,  Takashi Hayakawa ,  Mariko Ozawa

    IPC: H01L21/768

    CPC classification number: H01L21/76843 ,  H01L21/3212 ,  H01L21/32136 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method for manufacturing semiconductor device includes preparing a structure including a substrate, an insulating layer on the substrate and having a recess, a barrier film on the insulating layer, and a copper film on the barrier such that the copper film is filling the recess with the barrier between the insulating layer and copper film, removing the copper film down to interface with the barrier such that copper wiring is formed in the recess, etching the wiring such that surface of the wiring is recessed from surface of the insulating layer, and removing the barrier from the surface of the insulating layer such that the surface of the insulating layer is exposed. The etching includes positioning the structure removed down to the barrier in organic compound atmosphere having vacuum state, and irradiating oxygen gas cluster ion beam on the surface of the wiring to anisotropically etch the wiring.

    Abstract translation: 一种半导体器件的制造方法，其特征在于，在基板上制作具有凹部的绝缘层，绝缘层上的阻挡膜和阻挡层上的铜膜的结构，使得铜膜以 绝缘层和铜膜之间的阻挡层，将铜膜向下移动以与屏障接合，使得在凹槽中形成铜布线，蚀刻布线使得布线的表面从绝缘层的表面凹陷，并且去除 从绝缘层的表面阻挡绝缘层的表面露出。 蚀刻包括在具有真空状态的有机化合物气氛中将结构向下移动到阻挡层，并且在布线的表面上照射氧气团簇离子束以各向异性地蚀刻布线。

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