- 专利标题： Multi-gate device with air gap spacer and fabrication methods thereof
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申请号： US16582694申请日： 2019-09-25
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公开(公告)号： US11177344B2公开(公告)日： 2021-11-16
- 发明人: Pei-Yu Wang , Wei Ju Lee
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/66 ; H01L21/306 ; H01L29/423 ; H01L29/08 ; H01L29/10 ; H01L29/45 ; H01L29/78 ; H01L21/02
摘要：
A semiconductor device includes a substrate, semiconductor wires disposed over the substrate, a gate structure wrapping around each of the semiconductor wires, and an epitaxial source/drain (S/D) feature in contact with the semiconductor wires. A portion of the epitaxial S/D feature is horizontally surrounded by an air gap.
公开/授权文献
- US20210091179A1 Multi-Gate Device and Fabrication Methods Thereof 公开/授权日：2021-03-25
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