- 专利标题: Semiconductor nanocrystal particles, production methods thereof, and devices including the same
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申请号: US16851625申请日: 2020-04-17
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公开(公告)号: US11180694B2公开(公告)日: 2021-11-23
- 发明人: Jeong Hee Lee , Hyun A Kang , Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Yuho Won , Eun Joo Jang
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Cantor Colburn LLP
- 优先权: KR10-2017-0139603 20171025
- 主分类号: C09K11/02
- IPC分类号: C09K11/02 ; C09K11/88 ; C01B19/00 ; B82Y20/00 ; B82Y40/00 ; H01L51/50 ; B82Y30/00
摘要:
A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.
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