Invention Grant
- Patent Title: Laser annealing apparatus for semiconductors having multiple laser energy measuring means
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Application No.: US15795746Application Date: 2017-10-27
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Publication No.: US11183402B2Publication Date: 2021-11-23
- Inventor: Joong-han Shin , Supakit Charnvanichborikarn , Bong-jin Kuh , Ki-chul Kim , Jae-hee Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2017-0051658 20170421
- Main IPC: C30B28/08
- IPC: C30B28/08 ; C30B13/24 ; G01N21/00 ; H01L21/67 ; G01N21/55

Abstract:
A laser annealing apparatus includes a laser oscillating structure, an oscillator, a beam expanding telescope, a first power meter, and a second power meter. The laser oscillating structure emits a first laser beam of a first wavelength and first beam cross-section to a substrate in a chamber including an optical window. The oscillator emits a second laser beam, of a second wavelength different from the first wavelength, to the substrate. The beam expanding telescope is on an optical path for the second laser beam and expands the second laser beam to a second beam cross-section. The first and second power meters measure energy of the second laser beam and a third laser beam, generated as the second laser beam is reflected by the substrate. The first beam cross-section and the second beam cross-section may be equal.
Public/Granted literature
- US20180308725A1 LASER ANNEALING APPARATUS Public/Granted day:2018-10-25
Information query
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