- 专利标题： Substrate processing method, substrate processing apparatus, and composite processing apparatus
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申请号： US16299934申请日： 2019-03-12
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公开(公告)号： US11185895B2公开(公告)日： 2021-11-30
- 发明人: Mana Tanabe , Hideaki Sakurai , Kosuke Takai , Kyo Otsubo , Minako Inukai
- 申请人： TOSHIBA MEMORY CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner L.L.P.
- 优先权： JPJP2018-167153 20180906
- 主分类号： B08B7/00
- IPC分类号： B08B7/00 ; B08B3/10 ; H01L21/02 ; H01L21/67
摘要：
According to one embodiment, a first liquid is supplied on a first face of a substrate. The first liquid has a pH with which a surface zeta potential of the substrate becomes negative and a surface zeta potential of a foreign substance attaching to the first face becomes positive. Then, a solidified layer in which at least part of the first liquid has been solidified is formed by cooling the substrate down to be equal to or lower than a solidification point of the first liquid. Thereafter, the solidified layer is melted.
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