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公开(公告)号：US10698311B2
公开(公告)日：2020-06-30
申请号：US15693284
申请日：2017-08-31
发明人： Takeshi Yamane , Kosuke Takai
摘要： A reflection-type exposure mask includes a light reflector provided in a pattern on a substrate. The light reflector has a multilayer structure including first-type layers and second-type layers that are alternately stacked. The second-type layers have a refractive index higher at an extreme ultraviolet wavelength than a refractive index of the first-type layer at the extreme ultraviolet wavelength. A light transmitting medium is on a side surface of the light reflector.
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公开(公告)号：US09946150B2
公开(公告)日：2018-04-17
申请号：US14847865
申请日：2015-09-08
发明人： Kosuke Takai
摘要： One embodiment of the present invention provides a light reflection type lithography mask including: a substrate; and a reflection layer. The reflection layer is formed on the substrate, and has a first pattern and a second pattern as viewed from above. The second pattern is located so as to be closest to one of one side and the other side of the first pattern in a first direction. A reflectivity at a portion corresponding to the first pattern is different from a reflectivity at a portion corresponding to the second pattern.
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公开(公告)号：US09846357B2
公开(公告)日：2017-12-19
申请号：US14475557
申请日：2014-09-02
发明人： Kosuke Takai
CPC分类号： G03F1/24
摘要： According to one embodiment, a photomask manufacturing method for patterning a multilayer film into a mask pattern in the multilayer film is provided. The photomask manufacturing method includes preparing a substrate including the multilayer film provided on the substrate, obtaining an amount of position variation before and after the multilayer film is patterned if a position of the mask pattern is deviated before and after patterning the multilayer film, forming the mask pattern at a position deviated by the amount of the position variation from a target position, if the multilayer film is patterned and a pattern of the multilayer film is formed at the target position, and patterning the multilayer film with the mask pattern.
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4.发明申请公开(公告)号：US20200078834A1
公开(公告)日：2020-03-12
申请号：US16299934
申请日：2019-03-12
发明人： Mana TANABE , Hideaki Sakurai , Kosuke Takai , Kyo Otsubo , Minako Inukai
摘要： According to one embodiment, a first liquid is supplied on a first face of a substrate. The first liquid has a pH with which a surface zeta potential of the substrate becomes negative and a surface zeta potential of a foreign substance attaching to the first face becomes positive. Then, a solidified layer in which at least part of the first liquid has been solidified is formed by cooling the substrate down to be equal to or lower than a solidification point of the first liquid. Thereafter, the solidified layer is melted.
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公开(公告)号：US10018904B2
公开(公告)日：2018-07-10
申请号：US15069482
申请日：2016-03-14
发明人： Kosuke Takai
摘要： An EUV mask according to an embodiment includes a substrate, a first line-shaped portion provided on the substrate, a second line-shaped portion provided on the substrate, a first sidewall disposed on a side surface of the first line-shaped portion, and a second sidewall disposed on a side surface of the second line-shaped portion. A first layer and a second layer are stacked in the first and second line-shaped portions. The first layer includes a first material. The second layer includes a second material. The first and second sidewalls include an oxide of the first material and cover a side surface of the first layer and a side surface of the second layer.
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公开(公告)号：US10012896B2
公开(公告)日：2018-07-03
申请号：US15253510
申请日：2016-08-31
发明人： Kosuke Takai
摘要： A lithography mask production method includes (a) forming, in a reflection layer of a blank substrate, a reference pattern used as a reference in reflectivity measurement and a reflection pattern used for lithography; (b) measuring a reflectivity Rref of the reflection layer at the reference pattern and a reflectivity RLS of the reflection layer at the reflection pattern; and (c) determining an effective width of the reflection layer at the reflection pattern based on the reflectivity Rref and the reflectivity RLS.
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7.发明授权公开(公告)号：US11185895B2
公开(公告)日：2021-11-30
申请号：US16299934
申请日：2019-03-12
发明人： Mana Tanabe , Hideaki Sakurai , Kosuke Takai , Kyo Otsubo , Minako Inukai
摘要： According to one embodiment, a first liquid is supplied on a first face of a substrate. The first liquid has a pH with which a surface zeta potential of the substrate becomes negative and a surface zeta potential of a foreign substance attaching to the first face becomes positive. Then, a solidified layer in which at least part of the first liquid has been solidified is formed by cooling the substrate down to be equal to or lower than a solidification point of the first liquid. Thereafter, the solidified layer is melted.
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8.发明授权公开(公告)号：US11123774B2
公开(公告)日：2021-09-21
申请号：US16296573
申请日：2019-03-08
发明人： Kosuke Takai , Mana Tanabe , Hideaki Sakurai
摘要： According to one embodiment, a substrate processing method includes supplying a liquid on a first face of a substrate, forming a solidified layer in which at least part of the liquid has been solidified by cooling the substrate down to be equal to or lower than a solidification point of the liquid, and melting the solidified layer. Forming the solidified layer, includes controlling a cooling parameter by monitoring an optical characteristic or acoustic wave characteristic of the solidified layer.
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