Invention Grant
- Patent Title: Semiconductor structure with polyimide packaging and manufacturing method
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Application No.: US16411529Application Date: 2019-05-14
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Publication No.: US11189538B2Publication Date: 2021-11-30
- Inventor: Chih-Fan Huang , Mao-Nan Wang , Kuo-Chin Chang , Hui-Chi Chen , Dian-Hau Chen , Yen-Ming Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/29 ; H01L23/31 ; H01L23/00 ; H01L23/528 ; H01L21/56 ; H01L21/768

Abstract:
The present disclosure provides a method that includes providing an integrated circuit (IC) substrate having various devices and an interconnection structure that couples the devices to an integrated circuit; forming a first passivation layer on the IC substrate; forming a redistribution layer on the first passivation layer, the redistribution layer being electrically connected to the interconnection structure; forming a second passivation layer on the redistribution layer and the first passivation layer; forming a polyimide layer on the second passivation layer; patterning the polyimide layer, resulting in a polyimide opening in the polyimide layer; and etching the second passivation layer through the polyimide opening using the polyimide layer as an etch mask.
Information query
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