Certain aspects of the present disclosure generally relate to a gate-all-around (GAA) semiconductor device. The GAA semiconductor device generally includes a substrate, a first nanosheet stack structure, a second nanosheet stack structure, the first and second nanosheet stack structures being disposed above a horizontal plane of the substrate and each comprising one or more nanosheet structures, and a dielectric structure disposed between the first nanosheet stack structure and the second nanosheet stack structure.