- 专利标题: RF impedance matching circuit and systems and methods incorporating same
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申请号: US16922228申请日: 2020-07-07
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公开(公告)号: US11195698B2公开(公告)日: 2021-12-07
- 发明人: Imran Ahmed Bhutta , Michael Gilliam Ulrich
- 申请人: Reno Technologies, Inc.
- 申请人地址: US DE Wilmington
- 专利权人: Reno Technologies, Inc.
- 当前专利权人: Reno Technologies, Inc.
- 当前专利权人地址: US DE Wilmington
- 代理机构: The Belles Group, P.C.
- 主分类号: H01J37/32
- IPC分类号: H01J37/32 ; H03H11/28 ; H01G7/00 ; H01L21/02 ; H01L21/311 ; H03H7/38 ; H05K7/20 ; H01L23/473
摘要:
In one embodiment, an RF impedance matching network utilizing at least one electronically variable capacitors (EVC) is disclosed. Each EVC includes discrete capacitors operably coupled in parallel, the discrete capacitors including fine capacitors and coarse capacitors. A control circuit determines a parameter related to the plasma chamber and, based on the parameter, determines which of the coarse capacitors and which of the fine capacitors to have switched in to cause an impedance match. The increase of the variable total capacitance of each EVC is achieved by switching in more of the coarse capacitors or more of the fine capacitors than are already switched in without switching out a coarse capacitor that is already switched in.
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