Invention Grant
- Patent Title: Methods of forming a silicon-insulator layer and semiconductor device having the same
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Application No.: US16426051Application Date: 2019-05-30
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Publication No.: US11195713B2Publication Date: 2021-12-07
- Inventor: Joachim Hirschler , Georg Ehrentraut , Christoffer Erbert , Klaus Goeschl , Markus Heinrici , Michael Hutzler , Wolfgang Koell , Stefan Krivec , Ingmar Neumann , Mathias Plappert , Michael Roesner , Olaf Storbeck
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102018114111.4 20180613,DE102018122979.8 20180919
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/51 ; H01L21/28 ; H01L21/18 ; H01L29/49

Abstract:
In one aspect, a method of forming a silicon-insulator layer is provided. The method includes arranging a silicon structure in a plasma etch process chamber and applying a plasma to the silicon structure in the plasma etch process chamber at a temperature of the silicon structure equal to or below 100° C. The plasma includes a component and a halogen derivate, thereby forming the silicon-insulator layer. The silicon-insulator layer includes silicon and the component. In another aspect, a semiconductor device is provided having a silicon-insulator layer formed by the method.
Public/Granted literature
- US20190385842A1 Methods of Forming a Silicon-Insulator Layer and Semiconductor Device Having the Same Public/Granted day:2019-12-19
Information query
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