Invention Grant
- Patent Title: Tungsten alloys in semiconductor devices
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Application No.: US15300569Application Date: 2014-07-25
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Publication No.: US11195798B2Publication Date: 2021-12-07
- Inventor: Yang Cao , Akm Shaestagir Chowdhury , Jeff Grunes
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2014/048274 WO 20140725
- International Announcement: WO2016/014084 WO 20160128
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/288 ; H01L23/532

Abstract:
Conducting alloys comprising cobalt, tungsten, and boron and conducting alloys comprising nickel, tungsten, and boron are described. These alloys can, for example, be used to form metal interconnects, can be used as liner layers for traditional copper or copper alloy interconnects, and can act as capping layers. The cobalt-tungsten and nickel-tungsten alloys can be deposited using electroless processes.
Public/Granted literature
- US20170018506A1 TUNGSTEN ALLOYS IN SEMICONDUCTOR DEVICES Public/Granted day:2017-01-19
Information query
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