Invention Grant
- Patent Title: Memory controller and operating method with read margin control circuit determining data valid window
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Application No.: US16871096Application Date: 2020-05-11
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Publication No.: US11200928B2Publication Date: 2021-12-14
- Inventor: Kwanyeob Chae , Sanghune Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2018-0003172 20180110
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G06F13/16 ; H03K19/20 ; H03K19/21

Abstract:
A read margin control circuit is provided. The read margin control circuit includes a delay circuit that delays a data input/output signal and generates delay signals having different phases from each other, a sampler that samples the delay signals based on a data strobe signal to generate sampling values, and a determiner configured to determine a data valid window of the data input/output signal based on the sampling values.
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