Invention Grant
- Patent Title: Semiconductor devices, semiconductor wafers, and methods of manufacturing the same
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Application No.: US16524774Application Date: 2019-07-29
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Publication No.: US11201124B2Publication Date: 2021-12-14
- Inventor: Chia-Ying Liu , Wu-Zang Yang , Chia-Jung Liu , Chi-Chih Huang
- Applicant: OMNIVISION TECHNOLOGIES, INC.
- Applicant Address: US CA Santa Clara
- Assignee: OMNIVISION TECHNOLOGIES, INC.
- Current Assignee: OMNIVISION TECHNOLOGIES, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/78 ; H01L23/58 ; H01L27/146 ; H01L23/00
Abstract:
The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate and a first deep trench isolation (DTI) structure filled with a dielectric material formed on the semiconductor substrate. The first DTI structure is disposed in the first seal ring region and is extended into the semiconductor substrate. The semiconductor substrate has a pixel array region and a first seal ring region. The first seal ring region is proximate to an edge of the semiconductor substrate and surrounds the pixel array region. The first DTI structure is formed in the first seal ring region and surrounds the pixel array region.
Public/Granted literature
- US20210035926A1 SEMICONDUCTOR DEVICES, SEMICONDUCTOR WAFERS, AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2021-02-04
Information query
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