公开(公告)号：US10739646B1

公开(公告)日：2020-08-11

申请号：US16399373

申请日：2019-04-30

Applicant: OmniVision Technologies, Inc.

Inventor： Ming Zhang ,  Yin Qian ,  Libo Weng ,  Dyson H. Tai ,  Chia-Ying Liu ,  Chia-Jung Liu

IPC: G02F1/1337 ,  G02F1/1335 ,  G02F1/1362

Abstract: A reflective semiconductor device includes integrated circuitry disposed in a semiconductor layer. A first plurality of mirrors is formed in a mirror layer over the semiconductor layer, and each of the first plurality of mirrors is spaced apart from one another by at least a uniform width. A thin dielectric film layer covers sidewalls of the first plurality of mirrors and the semiconductor layer in the regions between the spaced apart first plurality of mirrors. A second plurality of mirrors are formed in the mirror layer between the thin dielectric film layer covered sidewalls of the first plurality of mirrors and over the thin dielectric film layer covering the semiconductor layer. Each one of the first and second plurality of mirrors has the uniform width, and is coupled to the integrated circuitry disposed in the semiconductor layer.

公开(公告)号：US11201124B2

公开(公告)日：2021-12-14

申请号：US16524774

申请日：2019-07-29

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chia-Ying Liu ,  Wu-Zang Yang ,  Chia-Jung Liu ,  Chi-Chih Huang

IPC: H01L21/762 ,  H01L21/78 ,  H01L23/58 ,  H01L27/146 ,  H01L23/00

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate and a first deep trench isolation (DTI) structure filled with a dielectric material formed on the semiconductor substrate. The first DTI structure is disposed in the first seal ring region and is extended into the semiconductor substrate. The semiconductor substrate has a pixel array region and a first seal ring region. The first seal ring region is proximate to an edge of the semiconductor substrate and surrounds the pixel array region. The first DTI structure is formed in the first seal ring region and surrounds the pixel array region.

公开(公告)号：US11557625B2

公开(公告)日：2023-01-17

申请号：US16853684

申请日：2020-04-20

Applicant: OmniVision Technologies, Inc.

Inventor： Chia-Ying Liu ,  Wu-Zang Yang ,  Chia-Jung Liu ,  Ming Zhang ,  Yin Qian ,  Alireza Bonakdar

IPC: H01L27/146 ,  H01L31/0216 ,  H01L31/14 ,  H01L31/0352

Abstract: An image sensor with embedded wells for accommodating light emitters includes a semiconductor substrate including an array of doped sensing regions respectively corresponding to an array of photosensitive pixels of the image sensor. The semiconductor substrate forms an array of wells. Each well is aligned with a respective doped sensing region to facilitate detection, by the photosensitive pixel that includes said respective doped sensing region, of light emitted to the photosensitive pixel by a light emitter disposed in the well. The image sensor further includes, between adjacent doped sensing regions, a light-blocking barrier to reduce propagation of light to the doped sensing-region of each photosensitive pixel from wells not aligned therewith.