Invention Grant
- Patent Title: Memory arrays and methods used in forming a memory array comprising strings of memory cells
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Application No.: US16705388Application Date: 2019-12-06
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Publication No.: US11205660B2Publication Date: 2021-12-21
- Inventor: Manzar Siddik , Chris M. Carlson , Terry H. Kim , Kunal Shrotri , Srinath Venkatesan
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L21/3215 ; H01L21/3115 ; H01L27/11556
Abstract:
A memory array comprising strings of memory cells comprises a vertical stack comprising alternating insulative tiers and conductive tiers. The strings of memory cells in the stack comprise channel-material strings and storage-material strings extending through the insulative tiers and the conductive tiers. At least some of the storage material of the storage-material strings in individual of the insulative tiers are intrinsically less charge-transmissive than is the storage material in the storage-material strings in individual of the conductive tiers. Other aspects, including method, are disclosed.
Public/Granted literature
- US20210175247A1 Memory Arrays And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells Public/Granted day:2021-06-10
Information query
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