Invention Grant
- Patent Title: Spintronic devices, duplexers, transceivers and telecommunication devices
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Application No.: US16474575Application Date: 2017-03-23
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Publication No.: US11205749B2Publication Date: 2021-12-21
- Inventor: Richard Dorrance , Farhana Sheikh
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: 2SPL Patent Attorneys PartG mbB
- Agent Yong Beom Hwang
- International Application: PCT/US2017/023694 WO 20170323
- International Announcement: WO2018/174877 WO 20180927
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/08 ; H01L43/12 ; H04L5/14 ; H01L43/10
Abstract:
A spintronic device includes a first ferromagnetic layer. The first ferromagnetic layer includes a first direction of magnetic polarization. Furthermore, the spintronic device includes a second ferromagnetic layer. The second ferromagnetic layer includes a second direction of magnetic polarization opposite to the first direction. Furthermore, the spintronic device includes a long spin lifetime layer. Furthermore, the spintronic device includes a first tunnel barrier layer disposed between the first ferromagnetic layer and the long spin lifetime layer. Furthermore, the spintronic device includes a second tunnel barrier layer disposed between the second ferromagnetic layer and the long spin lifetime layer.
Public/Granted literature
- US20200020850A1 Spintronic devices, duplexers, transceivers and telecommunication devices Public/Granted day:2020-01-16
Information query
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