Systems and methods for thermal hydro-synthesis of semiconductor materials by holding a substrate wafer within a chamber in a vertical direction

Invention Grant

US11220758B2 Systems and methods for thermal hydro-synthesis of semiconductor materials by holding a substrate wafer within a chamber in a vertical direction 有权

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Patent Title: Systems and methods for thermal hydro-synthesis of semiconductor materials by holding a substrate wafer within a chamber in a vertical direction
Application No.: US15623345

Application Date: 2017-06-14
Publication No.: US11220758B2

Publication Date: 2022-01-11
Inventor: Yi Jung Kim , Seom Geun Lee , Young Deuk Park , Ki Suk Kim
Applicant: SEOUL VIOSYS CO., LTD.
Applicant Address: KR Ansan-si
Assignee: SEOUL VIOSYS CO., LTD.
Current Assignee: SEOUL VIOSYS CO., LTD.
Current Assignee Address: KR Ansan-si
Agency: Perkins Coie LLP
Main IPC: H01L21/02
IPC: H01L21/02 ; C30B7/10 ; C30B29/16 ; H01L33/42

Systems and methods for thermal hydro-synthesis of semiconductor materials by holding a substrate wafer within a chamber in a vertical direction

Abstract:

Devices, systems and methods for fabricating semiconductor material devices by placing a batch of wafers in a chemical solution within a growth chamber. The wafers are held in a vertical direction and are actuated to move within the chemical solution while growing a layer over exposed surfaces of the wafers.

Public/Granted literature

US20170365758A1 SYSTEMS AND METHODS FOR THERMAL HYDRO-SYNTHESIS OF SEMICONDUCTOR MATERIALS BY HOLDING A SUBSTRATE WAFER WITHIN A CHAMBER IN A VERTICAL DIRECTION Public/Granted day:2017-12-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理