- 专利标题： Methods of forming air spacers in semiconductor devices
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申请号： US16572320申请日： 2019-09-16
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公开(公告)号： US11227950B2公开(公告)日： 2022-01-18
- 发明人: Chao-Hsun Wang , Chen-Ming Lee , Kuo-Yi Chao , Mei-Yun Wang , Pei-Yu Chou , Kuo-Ju Chen
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/02 ; H01L21/764 ; H01L29/417 ; H01L21/762 ; H01L27/088
摘要：
A semiconductor structure includes a source/drain (S/D) feature disposed in a semiconductor layer, a metal gate stack (MG) disposed in a first interlayer dielectric (ILD) layer and adjacent to the S/D feature, a second ILD layer disposed over the MG, and an S/D contact disposed over the S/D feature. The semiconductor structure further includes an air gap disposed between a sidewall of a bottom portion of the S/D contact and the first ILD layer, where a sidewall of a top portion of the S/D contact is in direct contact with the second ILD layer.
公开/授权文献
- US20210083114A1 Methods of Forming Air Spacers in Semiconductor Devices 公开/授权日：2021-03-18
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