公开(公告)号：US20250096041A1

公开(公告)日：2025-03-20

申请号：US18955171

申请日：2024-11-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Meng-Han Chou ,  Su-Hao Liu ,  Kuo-Ju Chen ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/3215 ,  H01L23/532 ,  H01L23/535 ,  H01L29/08 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78

Abstract: A method includes forming a metallic feature, forming an etch stop layer over the metallic feature, implanting the metallic feature with a dopant, forming a dielectric layer over the etch stop layer, performing a first etching process to etch the dielectric layer and the etch stop layer to form a first opening, performing a second etching process to etch the metallic feature and to form a second opening in the metallic feature, wherein the second opening is joined with the first opening, and filling the first opening and the second opening with a metallic material to form a contact plug.

公开(公告)号：US12224327B2

公开(公告)日：2025-02-11

申请号：US18366369

申请日：2023-08-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Ju Chen ,  Shih-Hsiang Chiu ,  Su-Hao Liu ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L29/417 ,  H01L21/285 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/40 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78

Abstract: Methods for improving sealing between contact plugs and adjacent dielectric layers and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first dielectric layer over a conductive feature, a first portion of the first dielectric layer including a first dopant; a metal feature electrically coupled to the conductive feature, the metal feature including a first contact material in contact with the conductive feature; a second contact material over the first contact material, the second contact material including a material different from the first contact material, a first portion of the second contact material further including the first dopant; and a dielectric liner between the first dielectric layer and the metal feature, a first portion of the dielectric liner including the first dopant.

公开(公告)号：US12112977B2

公开(公告)日：2024-10-08

申请号：US18190297

申请日：2023-03-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Ju Chen ,  Su-Hao Liu ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo ,  Meng-Han Chou

IPC: H01L21/768 ,  H01L23/522 ,  H01L29/78

CPC classification number: H01L21/76802 ,  H01L21/76877 ,  H01L23/5226 ,  H01L29/785

Abstract: A method includes forming a first dielectric layer over a source/drain region, and forming a source/drain contact plug over and electrically connecting to the source/drain region. A top portion of the source/drain contact plug has a first lateral dimension. An implantation process is performed to implant a dopant into the first dielectric layer. The implantation process results in the source/drain contact plug to have a second lateral dimension smaller than the first lateral dimension. The method further includes forming a second dielectric layer over the etch stop layer, and forming a gate contact plug adjacent to the source/drain contact plug.

公开(公告)号：US20230369103A1

公开(公告)日：2023-11-16

申请号：US18359414

申请日：2023-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Ju Chen ,  Chun-Hsien Huang ,  Su-Hao Liu ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/76825 ,  H01L21/76822 ,  H01L23/5283 ,  H01L21/76883 ,  H01L23/53295 ,  H01L21/76816 ,  H01L23/5226 ,  H01L23/53242 ,  H01L21/76886

Abstract: A connecting structure includes a first dielectric layer disposed over a substrate and a conductive feature, a doped dielectric layer disposed over the first dielectric layer, a first metal portion disposed in the first dielectric layer and in contact with the conductive feature, and a doped metal portion disposed over the first metal portion. The first metal portion and the doped metal portion include a same noble metal material. The doped dielectric layer and the doped metal portion include same dopants.

公开(公告)号：US11615982B2

公开(公告)日：2023-03-28

申请号：US17150552

申请日：2021-01-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Ju Chen ,  Su-Hao Liu ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo ,  Meng-Han Chou

IPC: H01L21/768 ,  H01L29/78 ,  H01L23/522

Abstract: A method includes forming a first dielectric layer over a source/drain region, and forming a source/drain contact plug over and electrically connecting to the source/drain region. A top portion of the source/drain contact plug has a first lateral dimension. An implantation process is performed to implant a dopant into the first dielectric layer. The implantation process results in the source/drain contact plug to have a second lateral dimension smaller than the first lateral dimension. The method further includes forming a second dielectric layer over the etch stop layer, and forming a gate contact plug adjacent to the source/drain contact plug.

公开(公告)号：US11450741B2

公开(公告)日：2022-09-20

申请号：US17201041

申请日：2021-03-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Su-Hao Liu ,  Huicheng Chang ,  Chia-Cheng Chen ,  Liang-Yin Chen ,  Kuo-Ju Chen ,  Chun-Hung Wu ,  Chang-Miao Liu ,  Huai-Tei Yang ,  Lun-Kuang Tan ,  Wei-Ming You

IPC: H01L21/8234 ,  H01L29/08 ,  H01L29/167 ,  H01L29/78 ,  H01L21/02 ,  H01L21/285 ,  H01L29/66 ,  H01L21/265 ,  H01L29/417

Abstract: The present disclosure relates generally to doping for conductive features in a semiconductor device. In an example, a structure includes an active region of a transistor. The active region includes a source/drain region, and the source/drain region is defined at least in part by a first dopant having a first dopant concentration. The source/drain region further includes a second dopant with a concentration profile having a consistent concentration from a surface of the source/drain region into a depth of the source/drain region. The consistent concentration is greater than the first dopant concentration. The structure further includes a conductive feature contacting the source/drain region at the surface of the source/drain region.

公开(公告)号：US20220230911A1

公开(公告)日：2022-07-21

申请号：US17150552

申请日：2021-01-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Ju Chen ,  Su-Hao Liu ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo ,  Meng-Han Chou

IPC: H01L21/768 ,  H01L23/522 ,  H01L29/78

Abstract: A method includes forming a first dielectric layer over a source/drain region, and forming a source/drain contact plug over and electrically connecting to the source/drain region. A top portion of the source/drain contact plug has a first lateral dimension. An implantation process is performed to implant a dopant into the first dielectric layer. The implantation process results in the source/drain contact plug to have a second lateral dimension smaller than the first lateral dimension. The method further includes forming a second dielectric layer over the etch stop layer, and forming a gate contact plug adjacent to the source/drain contact plug.

公开(公告)号：US11289417B2

公开(公告)日：2022-03-29

申请号：US16805834

申请日：2020-03-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Yu Chou ,  Jr-Hung Li ,  Liang-Yin Chen ,  Su-Hao Liu ,  Tze-Liang Lee ,  Meng-Han Chou ,  Kuo-Ju Chen ,  Huicheng Chang ,  Tsai-Jung Ho ,  Tzu-Yang Ho

IPC: H01L23/522 ,  H01L29/08 ,  H01L23/532 ,  H01L29/66 ,  H01L21/768 ,  H01L21/3105 ,  H01L29/78 ,  H01L21/02 ,  H01L23/528 ,  H01L29/06

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.

公开(公告)号：US20240321751A1

公开(公告)日：2024-09-26

申请号：US18654111

申请日：2024-05-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Ju Chen ,  Chun-Hsien Huang ,  Su-Hao Liu ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L23/532 ,  H01L21/3215 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/53242 ,  H01L21/3215 ,  H01L21/76883 ,  H01L23/5226

Abstract: A semiconductor device includes a first dielectric layer disposed over a substrate and a conductive feature, a doped dielectric layer disposed over the first dielectric layer, a first metal portion disposed in the first dielectric layer and in contact with the conductive feature, and a doped metal portion disposed over the first metal portion. The first metal portion and the doped metal portion include a same noble metal material. The doped dielectric layer and the doped metal portion include same dopants. The dopants are bonded to the noble metal material.

公开(公告)号：US20230253243A1

公开(公告)日：2023-08-10

申请号：US18190297

申请日：2023-03-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Ju Chen ,  Su-Hao Liu ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo ,  Meng-Han Chou

IPC: H01L21/768 ,  H01L29/78 ,  H01L23/522

CPC classification number: H01L21/76802 ,  H01L29/785 ,  H01L23/5226 ,  H01L21/76877

Abstract: A method includes forming a first dielectric layer over a source/drain region, and forming a source/drain contact plug over and electrically connecting to the source/drain region. A top portion of the source/drain contact plug has a first lateral dimension. An implantation process is performed to implant a dopant into the first dielectric layer. The implantation process results in the source/drain contact plug to have a second lateral dimension smaller than the first lateral dimension. The method further includes forming a second dielectric layer over the etch stop layer, and forming a gate contact plug adjacent to the source/drain contact plug.