Invention Grant
- Patent Title: Methods of etching metal oxides with less etch residue
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Application No.: US16831251Application Date: 2020-03-26
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Publication No.: US11232955B2Publication Date: 2022-01-25
- Inventor: Amrita B. Mullick , Abhijit Basu Mallick , Srinivas Gandikota , Susmit Singha Roy , Yingli Rao , Regina Freed , Uday Mitra
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L21/311 ; H01L21/02 ; H01L21/306
Abstract:
Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.
Public/Granted literature
- US20200227275A1 Methods Of Etching Metal Oxides With Less Etch Residue Public/Granted day:2020-07-16
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