Invention Grant
- Patent Title: Integration of high density cross-point memory and CMOS logic for high density low latency eNVM and eDRAM applications
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Application No.: US16629915Application Date: 2017-09-25
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Publication No.: US11233040B2Publication Date: 2022-01-25
- Inventor: Elijah V. Karpov , Prashant Majhi , Brian S. Doyle , Ravi Pillarisetty , Yih Wang
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2017/053309 WO 20170925
- International Announcement: WO2019/059952 WO 20190328
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L25/18 ; H01L23/00 ; H01L25/065 ; H01L25/00

Abstract:
An embedded cross-point memory array is described. In an example, an integrated circuit structure includes a first die including a cross-point memory array comprising separate memory blocks, the memory blocks including orthogonally arranged conductive lines, and memory elements at cross-sections of the conductive lines. A first plurality of sockets is on the first die adjacent to the memory blocks, the first plurality of sockets comprising a first plurality of pads that connect to at least a portion to the conductive lines of the corresponding memory block. A second die includes logic circuitry and a second plurality of sockets comprising a second plurality of pads at least partially aligned with positions of the first plurality of pads on the first die. A top of the first die and a top of the second die face one another, wherein the first plurality of pads are bonded with the second plurality pads to directly connect the cross-point memory array to the logic circuitry.
Information query
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