Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16745682Application Date: 2020-01-17
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Publication No.: US11233147B2Publication Date: 2022-01-25
- Inventor: Masato Noborio , Jun Saito , Yukihiko Watanabe
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JPJP2019-007837 20190121
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/78 ; H01L29/423 ; H01L29/16 ; H01L29/08 ; H01L29/417
Abstract:
A semiconductor device includes an inversion type semiconductor element including: a semiconductor substrate; a first conductive type layer formed on the semiconductor substrate; an electric field blocking layer formed on the first conductive type layer and including a linear shaped portion; a JFET portion formed on the first conductive type layer and having a linear shaped portion; a current dispersion layer formed on the electric field blocking layer and the JFET portion; a deep layer formed on the electric field blocking layer and the JFET portion; a base region formed on the current dispersion layer and the deep layer; a source region formed on the base region; trench gate structures including a gate trench, a gate insulation film, and a gate electrode, and arranged in a stripe shape; an interlayer insulation; a source electrode; and a drain electrode formed on a back surface side of the semiconductor substrate.
Public/Granted literature
- US20200235239A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-07-23
Information query
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