公开(公告)号：US11233147B2

公开(公告)日：2022-01-25

申请号：US16745682

申请日：2020-01-17

Applicant: DENSO CORPORATION

Inventor： Masato Noborio ,  Jun Saito ,  Yukihiko Watanabe

IPC: H01L29/739 ,  H01L29/78 ,  H01L29/423 ,  H01L29/16 ,  H01L29/08 ,  H01L29/417

Abstract: A semiconductor device includes an inversion type semiconductor element including: a semiconductor substrate; a first conductive type layer formed on the semiconductor substrate; an electric field blocking layer formed on the first conductive type layer and including a linear shaped portion; a JFET portion formed on the first conductive type layer and having a linear shaped portion; a current dispersion layer formed on the electric field blocking layer and the JFET portion; a deep layer formed on the electric field blocking layer and the JFET portion; a base region formed on the current dispersion layer and the deep layer; a source region formed on the base region; trench gate structures including a gate trench, a gate insulation film, and a gate electrode, and arranged in a stripe shape; an interlayer insulation; a source electrode; and a drain electrode formed on a back surface side of the semiconductor substrate.

公开(公告)号：US12211902B2

公开(公告)日：2025-01-28

申请号：US17520882

申请日：2021-11-08

Applicant: DENSO CORPORATION

Inventor： Masato Noborio ,  Takehiro Kato ,  Yusuke Yamashita

IPC: H01L29/10 ,  H01L21/04 ,  H01L21/76 ,  H01L21/761 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

Abstract: In a semiconductor device, a source region is made of an epitaxial layer so as to reduce variation in thickness of a base region and variation in a threshold value. Outside of a cell part, a side surface of a gate trench is inclined relative to a normal direction to a main surface of a substrate, as compared with a side surface of a gate trench in the cell part that is provided by the epitaxial layer of the source region being in contact with the base region.

公开(公告)号：US10964809B2

公开(公告)日：2021-03-30

申请号：US16816463

申请日：2020-03-12

Applicant: DENSO CORPORATION

Inventor： Masato Noborio ,  Masayasu Ishiko ,  Jun Saito

IPC: H01L29/78 ,  H01L21/265 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device comprises: a cell region that includes a semiconductor element; an outer peripheral region that surrounds an outer periphery of the cell region; a substrate that has a front surface and a back surface, and is made of a semiconductor of a first or second conductivity type; a first conductivity layer that is formed on the front surface of the substrate and made of the semiconductor of the first conductivity type having a lower impurity concentration than impurity concentration of the substrate; a first electrode that is provided on an opposite side of the substrate across the first conductivity layer, the first electrode being provided in the semiconductor element; and a second electrode that is placed toward the back surface of the substrate, the second electrode being provided in the semiconductor element.

公开(公告)号：US12288817B2

公开(公告)日：2025-04-29

申请号：US17871231

申请日：2022-07-22

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Masato Noborio

IPC: H01L29/78 ,  H01L21/04 ,  H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L29/66

Abstract: A semiconductor device has a cell region formed with a semiconductor element and an outer peripheral region surrounding the cell region. The outer peripheral region includes a guard ring part having a plurality of guard rings of the second conductivity-type, and a plurality of guard ring column regions of the second conductivity-type. Each of the guard rings is disposed in a surface layer portion of the drift layer and has a frame shape surrounding the cell region. The guard ring column regions are extended from the guard rings toward the substrate. Each of the guard ring column regions has a width smaller than a width of each of the guard rings in a direction along a planar direction of the substrate in a predetermined cross-section defined along the cell region and the outer peripheral region. At least two guard ring column regions are provided for each guard ring.