- 专利标题: Laser lift off systems and methods
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申请号: US16418284申请日: 2019-05-21
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公开(公告)号: US11239116B2公开(公告)日: 2022-02-01
- 发明人: Jeffrey P. Sercel , Marco Mendes , Jie Fu
- 申请人: IPG Photonics Corporation
- 申请人地址: US MA Oxford
- 专利权人: IPG Photonics Corporation
- 当前专利权人: IPG Photonics Corporation
- 当前专利权人地址: US MA Oxford
- 代理机构: Grossman, Tucker, Perrault & Pfleger, PLLC
- 主分类号: B32B38/10
- IPC分类号: B32B38/10 ; B23K26/40 ; H01L21/78 ; B32B38/00 ; B32B43/00 ; H01L21/67 ; B23K101/40 ; B23K103/00
摘要:
Laser lift off systems and methods may be used to provide monolithic laser lift off with minimal cracking by reducing the size of one or more beam spots in one or more dimensions to reduce plume pressure while maintaining sufficient energy to provide separation. By irradiating irradiation zones with various shapes and in various patterns, the laser lift off systems and methods use laser energy more efficiently, reduce cracking when separating layers, and improve productivity. Some laser lift off systems and methods described herein separate layers of material by irradiating non-contiguous irradiation zones with laser lift off zones (LOZs) that extend beyond the irradiation zones. Other laser lift off systems and methods described herein separate layers of material by shaping the irradiation zones and by controlling the overlap of the irradiation zones in a way that avoids uneven exposure of the workpiece. Consistent with at least one embodiment, a laser lift off system and method may be used to provide monolithic lift off of one or more epitaxial layers on a substrate of a semiconductor wafer.
公开/授权文献
- US20190279905A1 Laser Lift Off Systems and Methods 公开/授权日:2019-09-12