-
公开(公告)号：US11565350B2
公开(公告)日：2023-01-31
申请号：US16422558
申请日：2019-05-24
发明人： Jeffrey P. Sercel , Marco Mendes , Rouzbeh Sarrafi , Joshua Schoenly , Xiangyang Song , Mathew Hannon , Miroslaw Sokol
IPC分类号： B23K26/361 , B23K26/08 , B23K26/38 , B23K26/402 , B23K103/00
摘要： Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).
-
公开(公告)号：US11239116B2
公开(公告)日：2022-02-01
申请号：US16418284
申请日：2019-05-21
发明人： Jeffrey P. Sercel , Marco Mendes , Jie Fu
IPC分类号： B32B38/10 , B23K26/40 , H01L21/78 , B32B38/00 , B32B43/00 , H01L21/67 , B23K101/40 , B23K103/00
摘要： Laser lift off systems and methods may be used to provide monolithic laser lift off with minimal cracking by reducing the size of one or more beam spots in one or more dimensions to reduce plume pressure while maintaining sufficient energy to provide separation. By irradiating irradiation zones with various shapes and in various patterns, the laser lift off systems and methods use laser energy more efficiently, reduce cracking when separating layers, and improve productivity. Some laser lift off systems and methods described herein separate layers of material by irradiating non-contiguous irradiation zones with laser lift off zones (LOZs) that extend beyond the irradiation zones. Other laser lift off systems and methods described herein separate layers of material by shaping the irradiation zones and by controlling the overlap of the irradiation zones in a way that avoids uneven exposure of the workpiece. Consistent with at least one embodiment, a laser lift off system and method may be used to provide monolithic lift off of one or more epitaxial layers on a substrate of a semiconductor wafer.
-
公开(公告)号：US10974494B2
公开(公告)日：2021-04-13
申请号：US15613768
申请日：2017-06-05
IPC分类号： B32B43/00 , B23K26/50 , B23K26/40 , B23K101/40 , B23K103/00
摘要： Laser lift off systems and methods overlap irradiation zones to provide multiple pulses of laser irradiation per location at the interface between layers of material to be separated. To overlap irradiation zones, the laser lift off systems and methods provide stepwise relative movement between a pulsed laser beam and a workpiece. The laser irradiation may be provided by a non-homogeneous laser beam with a smooth spatial distribution of energy across the beam profile. The pulses of laser irradiation from the non-homogenous beam may irradiate the overlapping irradiation zones such that each of the locations at the interface is exposed to different portions of the non-homogeneous beam for each of the multiple pulses of the laser irradiation, thereby resulting in self-homogenization. Thus, the number of the multiple pulses of laser irradiation per location is generally sufficient to provide the self-homogenization and to separate the layers of material.
-
4.发明申请公开(公告)号：US20210094127A1
公开(公告)日：2021-04-01
申请号：US17074489
申请日：2020-10-19
发明人： Jeffrey P. Sercel , Marco Mendes , Rouzbeh Sarrafi , Joshua Schoenly , Xiangyang Song , Mathew Hannon , Miroslaw Sokol
IPC分类号： B23K26/402 , B23K26/38 , B23K26/06 , B23K26/0622 , B23K26/08 , B23K26/361 , B23K26/082 , B23K26/70 , C03B33/02
摘要： Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).
-
公开(公告)号：US10343237B2
公开(公告)日：2019-07-09
申请号：US14838837
申请日：2015-08-28
发明人： Jeffrey P. Sercel , Marco Mendes , Rouzbeh Sarrafi , Joshua Schoenly , Xiangyang Song , Mathew Hannon , Miroslaw Sokol
IPC分类号： B29C67/00 , B23K26/361 , B23K26/402 , B23K26/08 , B23K26/38 , B23K103/00
摘要： Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).
-
公开(公告)号：US20150179523A1
公开(公告)日：2015-06-25
申请号：US14624823
申请日：2015-02-18
发明人： Jeffrey P. Sercel , Marco Mendes , Jie Fu
CPC分类号： H01L21/7813 , B23K26/40 , B23K2101/40 , B23K2103/50 , B32B38/0008 , B32B38/10 , B32B43/006 , B32B2457/14 , H01L21/67115 , Y10S156/93 , Y10T156/1158 , Y10T156/1917
摘要： Laser lift off systems and methods may be used to provide monolithic laser lift off with minimal cracking by reducing the size of one or more beam spots in one or more dimensions to reduce plume pressure while maintaining sufficient energy to provide separation. By irradiating irradiation zones with various shapes and in various patterns, the laser lift off systems and methods use laser energy more efficiently, reduce cracking when separating layers, and improve productivity. Some laser lift off systems and methods described herein separate layers of material by irradiating non-contiguous irradiation zones with laser lift off zones (LOZs) that extend beyond the irradiation zones. Other laser lift off systems and methods described herein separate layers of material by shaping the irradiation zones and by controlling the overlap of the irradiation zones in a way that avoids uneven exposure of the workpiece. Consistent with at least one embodiment, a laser lift off system and method may be used to provide monolithic lift off of one or more epitaxial layers on a substrate of a semiconductor wafer.
摘要翻译： 激光剥离系统和方法可用于通过在一个或多个维度上减小一个或多个束斑的尺寸来减小羽流压力同时保持足够的能量以提供分离，从而提供具有最小裂纹的单片激光剥离。 通过照射各种形状和各种图案的照射区域，激光剥离系统和方法更有效地使用激光能量，减少分离层时的开裂，并提高生产率。 本文所述的一些激光剥离系统和方法通过用延伸超过照射区域的激光剥离区域（LOZ）照射不连续的照射区域来分离材料层。 本文所述的其它激光剥离系统和方法通过成形照射区域并通过以避免工件不均匀暴露的方式控制照射区域的重叠来分离材料层。 与至少一个实施例一致，可以使用激光剥离系统和方法来提供半导体晶片的衬底上的一个或多个外延层的单片剥离。
-
公开(公告)号：US20210300011A1
公开(公告)日：2021-09-30
申请号：US17228082
申请日：2021-04-12
摘要： Laser lift off systems and methods overlap irradiation zones to provide multiple pulses of laser irradiation per location at the interface between layers of material to be separated. To overlap irradiation zones, the laser lift off systems and methods provide stepwise relative movement between a pulsed laser beam and a workpiece. The laser irradiation may be provided by a non-homogeneous laser beam with a smooth spatial distribution of energy across the beam profile. The pulses of laser irradiation from the non-homogenous beam may irradiate the overlapping irradiation zones such that each of the locations at the interface is exposed to different portions of the non-homogeneous beam for each of the multiple pulses of the laser irradiation, thereby resulting in self-homogenization. Thus, the number of the multiple pulses of laser irradiation per location is generally sufficient to provide the self-homogenization and to separate the layers of material.
-
公开(公告)号：US10286487B2
公开(公告)日：2019-05-14
申请号：US14770565
申请日：2014-02-28
发明人： Vijay Kancharla , William Shiner , Steven Maynard , Jeffrey P. Sercel , Marco Mendes , Rouzbeh Sarrafi
IPC分类号： B23K26/06 , B23K26/14 , B23K26/38 , B23K26/382 , B23K26/402 , B23K26/082 , B23K26/364 , B23K26/0622 , B23K103/00
摘要： Laser processing of sapphire is performed using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm (hereinafter “QCW laser”). Laser processing of sapphire using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 10%) and in an inert gas atmosphere such as argon or helium. Laser processing of sapphire using a QCW laser may further include the use of an assist laser having a shorter wavelength and/or pulse duration to modify a property of the sapphire substrate to form absorption centers, which facilitate coupling of the laser light pulses of the QCW laser into the sapphire.
-
公开(公告)号：US20190314934A1
公开(公告)日：2019-10-17
申请号：US16422558
申请日：2019-05-24
发明人： Jeffrey P. Sercel , Marco Mendes , Rouzbeh Sarrafi , Joshua Schoenly , Xiangyang Song , Mathew Hannon , Miroslaw Sokol
IPC分类号： B23K26/361 , B23K26/38 , B23K26/402 , B23K26/08
摘要： Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).
-
公开(公告)号：US20190279905A1
公开(公告)日：2019-09-12
申请号：US16418284
申请日：2019-05-21
发明人： Jeffrey P. Sercel , Marco Mendes , Jie Fu
摘要： Laser lift off systems and methods may be used to provide monolithic laser lift off with minimal cracking by reducing the size of one or more beam spots in one or more dimensions to reduce plume pressure while maintaining sufficient energy to provide separation. By irradiating irradiation zones with various shapes and in various patterns, the laser lift off systems and methods use laser energy more efficiently, reduce cracking when separating layers, and improve productivity. Some laser lift off systems and methods described herein separate layers of material by irradiating non-contiguous irradiation zones with laser lift off zones (LOZs) that extend beyond the irradiation zones. Other laser lift off systems and methods described herein separate layers of material by shaping the irradiation zones and by controlling the overlap of the irradiation zones in a way that avoids uneven exposure of the workpiece. Consistent with at least one embodiment, a laser lift off system and method may be used to provide monolithic lift off of one or more epitaxial layers on a substrate of a semiconductor wafer.
-
-
-
-
-
-
-
-
-
搜索结果
15 条记录 (耗时 0.016 秒)