A method of forming a semiconductor device includes providing a structure that includes a substrate, a first fin and a second fin, a first gate structure engaging the first fin, and a second gate structure engaging the second fin; depositing a dielectric layer over the first and second gate structures; etching the dielectric layer, thereby forming a first gate contact opening exposing the first gate structure and a second gate contact opening exposing the second gate structure, wherein the first gate contact opening has a first length that is larger than a second length of the second gate contact opening; and filling the first and second gate contact openings with conductive material, thereby forming a first gate contact engaging the first gate structure and a second gate contact engaging the second gate structure.