- 专利标题： Metal gate contacts and methods of forming the same
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申请号： US17012530申请日： 2020-09-04
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公开(公告)号： US11239121B2公开(公告)日： 2022-02-01
- 发明人: Chih-Hsuan Chen , Jui-Lin Chen , Yu-Kuan Lin
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L27/11 ; H01L23/522 ; H01L21/768
摘要：
A method of forming a semiconductor device includes providing a structure that includes a substrate, a first fin and a second fin, a first gate structure engaging the first fin, and a second gate structure engaging the second fin; depositing a dielectric layer over the first and second gate structures; etching the dielectric layer, thereby forming a first gate contact opening exposing the first gate structure and a second gate contact opening exposing the second gate structure, wherein the first gate contact opening has a first length that is larger than a second length of the second gate contact opening; and filling the first and second gate contact openings with conductive material, thereby forming a first gate contact engaging the first gate structure and a second gate contact engaging the second gate structure.
公开/授权文献
- US20210098471A1 Metal Gate Contacts and Methods of Forming the Same 公开/授权日：2021-04-01
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