Invention Grant
- Patent Title: Light emitting diode with high efficiency
-
Application No.: US16246192Application Date: 2019-01-11
-
Publication No.: US11239387B2Publication Date: 2022-02-01
- Inventor: Keum Ju Lee , Seom Geun Lee , Kyoung Wan Kim , Yong Woo Ryu , Mi Na Jang
- Applicant: Seoul Viosys Co., Ltd.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2016-0047054 20160418,KR10-2016-0149627 20161110,KR10-2017-0020233 20170214
- Main IPC: H01L33/14
- IPC: H01L33/14 ; H01L33/38 ; H01L33/06 ; H01L27/15 ; H01L33/10 ; H01L33/32 ; H01L33/42 ; H01L33/62

Abstract:
A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.
Public/Granted literature
- US20190148588A1 LIGHT EMITTING DIODE WITH HIGH EFFICIENCY Public/Granted day:2019-05-16
Information query
IPC分类: