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Patent Agency Ranking
公开(公告)号：US11239387B2
公开(公告)日：2022-02-01
申请号：US16246192
申请日：2019-01-11
Applicant: Seoul Viosys Co., Ltd.
Inventor： Keum Ju Lee , Seom Geun Lee , Kyoung Wan Kim , Yong Woo Ryu , Mi Na Jang
Abstract: A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.
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公开(公告)号：US10181548B2
公开(公告)日：2019-01-15
申请号：US15490492
申请日：2017-04-18
Applicant: Seoul Viosys Co., Ltd.
Inventor： Keum Ju Lee , Seom Geun Lee , Kyoung Wan Kim , Yong Woo Ryu , Mi Na Jang
Abstract: A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.
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公开(公告)号：US10193020B2
公开(公告)日：2019-01-29
申请号：US15527807
申请日：2015-12-04
Applicant: Seoul Viosys Co., Ltd.
Inventor： Mi Hee Lee , Jun Hee Lee , So Ra Lee , Mi Na Jang
Abstract: A nitride semiconductor light emitting device may include: a semiconductor layer; an active layer; a second semiconductor layer; mesa regions formed to expose the semiconductor layer; a second electrode formed under the second semiconductor layer; a cover metal layer formed at a corner under the second semiconductor layer to overlap part of the second electrode; an insulating layer formed under the cover metal layer, the second electrode, and the mesa regions and having openings to expose the semiconductor layer; a first electrode disposed in the openings and over a conductive substrate; and a second electrode pad formed over the exposed cover metal layer, wherein when the width a of the second electrode between adjacent mesa regions and the width b of the second electrode between a mesa region at the edge and an extension line of the cover metal layer at the corner have a relation of a>b.
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公开(公告)号：US12199214B2
公开(公告)日：2025-01-14
申请号：US17586804
申请日：2022-01-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Keum Ju Lee , Seom Geun Lee , Kyoung Wan Kim , Yong Woo Ryu , Mi Na Jang
Abstract: A light emitting diode including a substrate having a first area and a second area defined by an isolation groove line, a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer, an active layer, a first electrode pad electrically connected to the lower semiconductor layer, a second electrode pad electrically connected to the upper semiconductor layer, and a connecting portion electrically connecting the semiconductor stack disposed in the first and second areas to each other, and including a first portion, a second portion, and a third portion extending from a second distal end of the first portion, in which the isolation groove line is disposed between the first and second electrode pads and exposes the substrate, the first portion extends along a first direction substantially parallel to an extending direction of the isolation groove line, and the second and third portions extend in a second direction crossing the first direction.
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公开(公告)号：US20190148588A1
公开(公告)日：2019-05-16
申请号：US16246192
申请日：2019-01-11
Applicant: Seoul Viosys Co., Ltd.
Inventor： Keum Ju Lee , Seom Geun Lee , Kyoung Wan Kim , Yong Woo Ryu , Mi Na Jang
Abstract: A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.
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