Invention Grant
- Patent Title: Hybrid CMOS image sensor with event driven sensing
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Application No.: US16862337Application Date: 2020-04-29
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Publication No.: US11240454B2Publication Date: 2022-02-01
- Inventor: Zhe Gao , Tiejun Dai
- Applicant: OMNIVISION TECHNOLOGIES, INC.
- Applicant Address: US CA Santa Clara
- Assignee: OMNIVISION TECHNOLOGIES, INC.
- Current Assignee: OMNIVISION TECHNOLOGIES, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Christensen O'Connor Johnson Kindness PLLC
- Main IPC: H04N5/3745
- IPC: H04N5/3745 ; H04N5/378

Abstract:
An image sensor includes a source follower coupled to a photodiode to generate an image signal responsive to photogenerated charge. The image signal is received by image readout circuitry through a row select transistor. A reset transistor resets the photogenerated charge. A first node of mode select circuit is coupled to the reset transistor, a second node is coupled to a pixel supply voltage, and a third node is coupled to an event driven circuit. The mode select circuit couples the first node to the second node during an imaging mode to supply the pixel supply voltage to the reset transistor. The mode select circuit is further configured to couple the first node to the third node during an event driven mode to couple a photocurrent of the photodiode to drive the event driven circuit through the reset transistor to detect changes in the photocurrent.
Public/Granted literature
- US20210344867A1 HYBRID CMOS IMAGE SENSOR WITH EVENT DRIVEN SENSING Public/Granted day:2021-11-04
Information query
IPC分类: