Invention Grant
- Patent Title: Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
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Application No.: US16024706Application Date: 2018-06-29
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Publication No.: US11257904B2Publication Date: 2022-02-22
- Inventor: Cheng-Ying Huang , Tahir Ghani , Jack Kavalieros , Anand Murthy , Harold Kennel , Gilbert Dewey , Matthew Metz , Willy Rachmady , Sean Ma , Nicholas Minutillo
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/10 ; H01L29/08 ; H01L29/205 ; H01L29/417 ; H01L29/66 ; H01L21/02 ; H01L29/78
Abstract:
Embodiments herein describe techniques, systems, and method for a semiconductor device. Embodiments herein may present a semiconductor device having a channel area including a channel III-V material, and a source area including a first portion and a second portion of the source area. The first portion of the source area includes a first III-V material, and the second portion of the source area includes a second III-V material. The channel III-V material, the first III-V material and the second III-V material may have a same lattice constant. Moreover, the first III-V material has a first bandgap, and the second III-V material has a second bandgap, the channel III-V material has a channel III-V material bandgap, where the channel material bandgap, the second bandgap, and the first bandgap form a monotonic sequence of bandgaps. Other embodiments may be described and/or claimed.
Public/Granted literature
- US20200006480A1 SOURCE-CHANNEL JUNCTION FOR III-V METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFETS) Public/Granted day:2020-01-02
Information query
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