- 专利标题： Semiconductor devices employing a barrier layer
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申请号： US16672180申请日： 2019-11-01
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公开(公告)号： US11264321B2公开(公告)日： 2022-03-01
- 发明人: Ying-Hsueh Chang Chien , Yu-Ming Lee , Man-Kit Leung , Chi-Ming Yang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; H01L21/768 ; H01L23/532
摘要：
A semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. A barrier layer on the sidewalls of the trench is formed using a surface modification process and a surface treatment process.
公开/授权文献
- US20200066633A1 Semiconductor Devices Employing a Barrier Layer 公开/授权日：2020-02-27
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