Invention Grant
- Patent Title: High-speed switch with accelerated switching time
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Application No.: US17164467Application Date: 2021-02-01
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Publication No.: US11264981B2Publication Date: 2022-03-01
- Inventor: Chengkai Luo
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: Jaquez Land Greenhaus & McFarland LLP
- Agent John Land, Esq.
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03K17/0412 ; H03K17/693

Abstract:
A method and apparatus is disclosed for maintaining a stable power supply to a circuit when activating/deactivating a switch in order to accelerate the switching time of the switch. The gate of a FET is coupled to a switch driver. The switch driver is powered by a positive power supply and a negative power supply. When the switch is to be activated/deactivated, the gate is first coupled to a reference potential (i.e., ground) for a “reset period” to reduce any positive/negative charge that has been accumulated in the FET. At the end of the reset period, the gate is then released from the reference potential and the switch driver drives the gate to the desired voltage level to either activate or deactivate the switch.
Public/Granted literature
- US20210265990A1 High-Speed Switch with Accelerated Switching Time Public/Granted day:2021-08-26
Information query
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