- Patent Title: Semiconductor device, FinFET device and methods of forming the same
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Application No.: US16805862Application Date: 2020-03-02
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Publication No.: US11271083B2Publication Date: 2022-03-08
- Inventor: Po-Hsien Cheng , Jr-Hung Li , Tai-Chun Huang , Tze-Liang Lee , Chung-Ting Ko , Jr-Yu Chen , Wan-Chen Hsieh
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/78 ; H01L29/66 ; H01L29/08
Abstract:
A semiconductor device includes a substrate, a gate structure on the substrate, a source/drain (S/D) region and a contact. The S/D region is located in the substrate and on a side of the gate structure. The contact lands on and connected to the S/D region. The contact wraps around the S/D region.
Public/Granted literature
- US20210098584A1 SEMICONDUCTOR DEVICE, FINFET DEVICE AND METHODS OF FORMING THE SAME Public/Granted day:2021-04-01
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