Invention Grant
- Patent Title: Integrated electronic circuit with airgaps
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Application No.: US16577332Application Date: 2019-09-20
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Publication No.: US11276606B2Publication Date: 2022-03-15
- Inventor: Shairfe Muhammad Salahuddin , Alessio Spessot
- Applicant: IMEC VZW
- Applicant Address: BE Leuven
- Assignee: IMEC VZW
- Current Assignee: IMEC VZW
- Current Assignee Address: BE Leuven
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Priority: EP18205965 20181113
- Main IPC: H01L21/764
- IPC: H01L21/764 ; H01L21/02 ; H01L21/311 ; H01L29/51

Abstract:
A method for forming airgaps within an integrated electronic circuit implements a conformal layer and a nanosheet both of boron nitride. The method has advantages for the circuit due to special properties of boron nitride material. In particular, mechanical strength and heat dissipation are increased whereas electro-migration is limited. The method may be applied to the first interconnect layer of the integrated circuit, for reducing additionally capacitive interactions existing between gate electrode structures and source or drain contact structures.
Public/Granted literature
- US20200152503A1 INTEGRATED ELECTRONIC CIRCUIT WITH AIRGAPS Public/Granted day:2020-05-14
Information query
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