Invention Grant
- Patent Title: Method for forming a device comprising a bipolar transistor
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Application No.: US16995054Application Date: 2020-08-17
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Publication No.: US11276752B2Publication Date: 2022-03-15
- Inventor: Alexis Gauthier , Pascal Chevalier , Gregory Avenier
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Crowe & Dunlevy
- Priority: FR1909282 20190819
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L29/732
Abstract:
A device including a transistor is fabricated by forming a first part of a first region of the transistor through the implantation of dopants through a first opening. The second region of the transistor is then formed in the first opening by epitaxy.
Public/Granted literature
- US20210057520A1 DEVICE COMPRISING A TRANSISTOR Public/Granted day:2021-02-25
Information query
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