Invention Grant
- Patent Title: Semiconductor device including trench structure and manufacturing method
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Application No.: US16811293Application Date: 2020-03-06
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Publication No.: US11276754B2Publication Date: 2022-03-15
- Inventor: Thomas Basler , Caspar Leendertz , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102019105812.0 20190307
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/16 ; H01L29/06 ; H01L29/66 ; H01L29/32 ; H01L29/78 ; H01L21/04 ; H01L29/10

Abstract:
An embodiment of a semiconductor device includes a silicon carbide semiconductor body including source and body regions of opposite conductivity types. A trench structure extends from a first surface into the silicon carbide semiconductor body along a vertical direction, and includes a gate electrode and a gate dielectric. A contact is electrically connected to the source region at the first surface. The source region includes a first source sub-region directly adjoining the contact at a source contact area of the first surface, a second source sub-region, and a third source sub-region. The second sub-region is arranged between the first and third sub-regions along the vertical direction. A doping concentration profile along the vertical direction of the source region includes a doping concentration minimum in the second sub-region and a doping concentration maximum in the third sub-region. Each of the second and third sub-regions overlaps with the source contact area.
Public/Granted literature
- US20200286991A1 Semiconductor Device Including Trench Structure and Manufacturing Method Public/Granted day:2020-09-10
Information query
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